FDC699P Discrete Semiconductor Products |
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| Allicdata Part #: | FDC699PTR-ND |
| Manufacturer Part#: |
FDC699P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 20V 7A SSOT-6 |
| More Detail: | P-Channel 20V 7A (Ta) 2W (Ta) Surface Mount SuperS... |
| DataSheet: | FDC699P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
| Supplier Device Package: | SuperSOT™-6 FLMP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2640pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FDC699P is a power MOSFET transistor used in a wide range of applications. It is a single, dual-gate MOSFET transistor with a maximum gate threshold voltage of 4.5V. The FDC699P has good switching characteristics and is capable of handling both low-and high-level logical signals. With its low on-resistance, it offers higher power efficiency in many applications.
The FDC699P is manufactured in an N-type package, which offers high thermally conductivity and a low profile. The transistor also provides good protection against electrical breakdown due to its high breakdown voltage. It also features integrated electrostatic protection, which keeps it free from ESD damage.
The working principle behind the FDC699P is based on the standard MOSFET technology. It works on the principle of capacitive coupling, where the gate terminal is used to control the flow of electrons between the source and drain terminals. The FDC699P has two separate gates, one controlling the flow of electrons and the other controlling the reverse flow of electrons. To activate the FDC699P, a voltage must be applied between the two gates, allowing electrons to flow from the source to the drain. The FDC699P is then actuated, producing an output depending on the applied voltage.
The FDC699P has a wide range of applications, from consumer electronics to industrial devices. It is widely used in the low-power application segment, such as for load switching, high-frequency switching, and power supply control. It can also be used in automotive and automotive accessories, such as for distributed power systems, logic level control, and power supply regulator circuits.
The FDC699P is also widely used in consumer products, such as in laptop computers, notebooks, cellular phones, digital cameras, control systems, and televisions. It can also be used in medical equipment, test and measurement equipment, and audio amplifiers. It is also suitable for automotive body control systems, active audio crossover networks, inverters, and motor control.
The FDC699P offers excellent power gains and a high degree of electrical insulation. It is also capable of fast switching times and offers a low thermal resistance. This makes it ideal for applications prone to high temperature variation. The FDC699P also comes with a wide array of corresponding power ratings, which makes it highly versatile for a variety of applications.
Overall, the FDC699P is a reliable and versatile power MOSFET transistor that offers excellent switching performance, high power gains, fast switching times and excellent thermal resistance. Its wide range of applications makes it suitable for a variety of markets such as consumer electronics, automotive, industrial, and medical equipment.
The specific data is subject to PDF, and the above content is for reference
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FDC699P Datasheet/PDF