FDD3570

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	20 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	76nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2800pF @ 40V
FET Feature:	--
Power Dissipation (Max):	3.4W (Ta), 69W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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Introduction

The FDD3570 is a terminally called insulated-gate field-effect transistor (IGFET) that is most commonly used as a high current power switching device. It is also known as an enhancement-mode MOSFET and is used for a variety of applications. This article will discuss the application fields of the device and the principle under which it operates.

Application Fields

The FDD3570 can be used for a wide variety of electronic applications due to its many advantageous features. In particular, this device is an excellent choice for high current power switching applications such as motor and lighting control. It is also popularly used in various digital systems like process control, programmable logic controllers, and embedded controllers. Furthermore, the FDD3570 is used for general purpose switching and power conversion in various low voltage, low noise circuits. Finally, it is used in some industrial applications and can operate efficiently under highly stressful environmental conditions.

Working Principle

The FDD3570 works based on the principle of insulated-gate field-effect transistors (IGFET). This type of device uses three terminal terminals - gate, drain, and source. The gate is used to control the transistor’s current and is connected to the gate signal. The drain is used to collect the current flow from the transistor and the source is connected to the supply voltage. The structure of the FDD3570 consists of four MOSFETs in a dual-gate arrangement which can be designed to provide enhanced power handling capabilities and improved temperature performance.When a voltage is applied across the gate and source terminals of the FDD3570, an electric field is created between the gate and bulk. This electric field causes electrons to flow from the source to the gate and results in a current flow. The flow of electrons creates a magnetic field, which in turn creates a force that controls the conductivity of the device. The FDD3570 can thus be used as a power switch in many applications as it is able to effectively control and regulate currents.The FDD3570 also has a fast reverse recovery time. This is because when the gate voltage is removed, the polarity of the source and drain terminals is reversed and the device is able to return to its off-state quickly. This feature makes the FDD3570 ideal for high-speed switching or for time-sensitive applications.

Conclusion

The FDD3570 is a high current power switching device that is well suited for a variety of electronic applications. It works on the principle of insulated-gate field-effect transistors and uses three terminals – gate, drain, and source – to control current flow. The FDD3570 is most popularly used for motor and lighting control, digital systems, low voltage and low noise circuits, as well as various industrial applications. Furthermore, its fast reverse recovery time makes it an attractive option for time-sensitive applications or for high-speed switching.

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