FDD3680

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	68W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1735pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	53nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	46 mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	25A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDD3680 Application Field and Working PrincipleFDD3680 is a high-performance transistor designed for the extreme reliability and tolerance that high-power applications demand. This device is perfect for medical use and other applications where a high-power, highly reliable transistor is desired. The FDD3680 has an extremely wide voltage range operating from 0.3V to 120V and is designed for extremely fast switching speeds. It is also designed for low power dissipation, which makes it ideal for energy efficiency applications.The FDD3680 is a field-effect transistor (FET) that uses a metal-oxide-semiconductor field-effect (MOSFET) structure. It is a unipolar transistor, meaning it only needs one type of electrical current (polarity). It has a source, a drain, and a gate. It is a 3-terminal device. The source, drain and gate terminals serve as the three electrodes of the FET, which control its operation. FETs are a type of transistor that operates as a current-controlled switch. By modulating the voltage applied to the gate terminal of the FET, the voltage drop across the source-drain terminals can be controlled. The voltage drop across the source-drain terminals is determined by the value of an important parameter called the channel conductance, which is the electrical conductance between the source and drain when a voltage is applied to the gate. The FDD3680 is designed for high-current, high-efficient, high-power applications such as motor control, automotive applications and power conversion systems. This device is designed to be extremely robust and has a high power-handling capacity. It has an extremely wide operating temperature range and is rated to handle currents up to 3.2A with a drain-source breakdown voltage of up to 34V and a gate-source threshold voltage of 4V. The FDD3680 has a low gate charge, which reduces the turn-on and turn-off times of the device. It also has a low resistance when operating in triode mode (i.e. when gate voltage is negative), which makes it ideal for high current applications. The FDD3680 is a robust and reliable MOSFET transistor ideal for high-power, high-performance applications. It has an extremely wide voltage range, low gate charge and low resistance making it perfect for power management systems. It has a high power-handling capacity and can handle high currents and voltages with ease.

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