FDD3682-F085

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	95W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1250pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	36 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDD3682-F085 is another type of single MOSFET (metal–oxide–semiconductor field-effect transistor). It is a small signal enhancement mode MOSFET transistor that is commonly used in low-power applications. This type of transistor offers very low on-state resistance as well as low threshold voltage and excellent input/output linear characteristics. It is an ideal replacement for low power BJT (Bipolar Junction Transistor) and MOSFET transistors that require a high level of performance.FDD3682-F085 is an N-channel MOSFET that can be used for many different applications. It is often used for power conversion and distribution, audio amplification, DC/DC converters, as well as other low-power switching and control applications. It is also commonly used in hot plugging and battery power supplies, motor drives, and medical appliances.This type of MOSFET is usually packaged in a small, surface-mounted package that is compatible with most automated assembly processes. The FDD3682-F085 transistor can be used in a wide range of commercial, industrial, and automotive applications because of its very low gate charge, high drive current capability, and excellent thermal stability.The FDD3682-F085 MOSFET transistor has a maximum drain-source voltage of 5.0V and a maximum drain current of 2A. It has a typical maximum power dissipation of 2.2W, making it suitable for many low power applications. Its typical on-state resistance (RDS [on]) is as low as 0.0053 Ω, and its typical threshold voltage is 3.2V. This type of transistor also features excellent short circuit protection and high frequency switching capabilities.The FDD3682-F085 MOSFET works according to the basic principles of MOSFETs. A voltage applied across a MOSFET\'s gate generates an electric field that causes an inversion layer on the semiconductor substrate. The inversion layer acts as an insulator and prevents current from flowing between the source and the drain.In order to turn the MOSFET on and off, a voltage of opposite polarity must be applied to the gate. When a positive voltage is applied to the MOSFET\'s gate, an electric field is created that causes electrons to flow from the source to the drain. This causes current to flow between the source and the drain and turns the MOSFET on.On the other hand, when a negative voltage is applied to the MOSFET\'s gate, the electric field causes holes to flow from the drain to the source. This prevents current from flowing between the source and the drain and turns the MOSFET off. The FDD3682-F085 MOSFET can be switched on and off in this manner to control current flow.The FDD3682-F085 MOSFET is an excellent choice for many different types of low-power applications. Its low on-state resistance makes it ideal for applications that require high efficiency and low power dissipation. It also offers excellent input/output linearity, high switching speeds, and very low threshold voltage and gate charge. Its wide range of commercial, industrial, and automotive applications make it a great choice for many different applications.

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