FDD390N15ALZ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDD390N15ALZ is a vertical double diffused metal oxide transistor (MOSFET) from Fairchild Semiconductor. It is an N-channel enhancement-mode MOSFET with a nominal drain current of 39A and drain-source voltage ratings of 600V. This device features a low on-state resistance (RDS(on)) and is ideal for use as a switch in high power applications such as in a switching power supply, motor control, in industrial inverters, and other high power applications.

The FDD390N15ALZ is built using a vertical double diffused MOS process, a technology that enables the formation of vertical structures on the MOS transistor during the manufacturing process, resulting in better electrical performance due to reduced RDS (on). The process also enables the device to operate at higher temperatures with improved thermal efficiency and reliability.

The FDD390N15ALZ has a drain source voltage rating of 600 V and a maximum drain current of 39A. The maximum continuous drain-source on-state resistance (RDS(on)) is 0.5 ohm and the maximum gate threshold voltage is 4.5V. The device also features a maximum diode reverse recovery time of 30ns and a maximum storage time of 20ns.

The FDD390N15ALZ is used primarily as a switch or as a voltage or current controlled current source in high power applications. It is used to control the power dissipation in the load current path and is also used to regulate the voltage in power control circuits. This device can be used in high bandwidth power conversion applications, motor control, industrial inverters and other high-power applications. The device can also be used in high-voltage applications such as high-voltage rectifiers and pulse generators.

In terms of working principle, the FDD390N15ALZ is an N-channel enhancement-mode device, meaning it is normally off but can be switched on by applying a positive gate-source voltage to create an inversion layer at the gate-source junction. When the gate voltage is sufficiently high enough to turn the transistor on, the drain current is equal to the source current, allowing current to flow from the drain to the source.

The FDD390N15ALZ also features a low on-state resistance, which means less power is dissipated as heat when the device is on. This helps to increase the power efficiency of the device and allows it to withstand higher temperatures. Additionally, the FDD390N15ALZ is capable of handling high transient currents that other MOSFETs cannot handle. This helps to reduce switching losses and makes it suitable for harsh switching environments.

In conclusion, the FDD390N15ALZ is an N-channel MOSFET that is ideal for use in high power applications such as motor control, industrial inverters, and other high power applications. It features a low on-state resistance, high voltage and current ratings, and low switching losses. The device is also able to handle high transient currents and withstand high temperatures. These features make the FDD390N15ALZ an ideal choice for high power applications.

The specific data is subject to PDF, and the above content is for reference