Allicdata Part #: | FDD3860TR-ND |
Manufacturer Part#: |
FDD3860 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 6.2A DPAK |
More Detail: | N-Channel 100V 6.2A (Ta) 3.1W (Ta), 69W (Tc) Surfa... |
DataSheet: | FDD3860 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1740pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 5.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDD3860 is a Single Field-Effect Transistor (FET). It is a semiconductor device that consists of a source, a gate, and a drain which can be used to control current flow. The FDD3860 is a very popular choice for a variety of applications which range from power electronics to digital circuits.
One of the main benefits of the FDD3860 is its ability to provide low-level switching of high-voltage loads. The FDD3860 is rated to handle up to 30V on the drain and gate, making it suitable for high-voltage switching applications. This feature makes the FDD3860 an ideal choice for situations where the circuit must remain “on” for a period of time but needs to be switched off eventually.
The FDD3860 produces an output waveform known as an ‘enhancement mode’ MOSFET waveform. This waveform typically has a positive voltage on the grid and a negative voltage on the drain. This waveform can be optimized for maximum power transfer by adjusting the gate voltage, gate resistance, and gate-to-drain capacitance.
The working principles of the FDD3860 can be summarized as follows. When a positive voltage is applied to the gate terminal, the channel area between the gate and the drain becomes conductive, which increases conductivity between the source and the drain, allowing current to flow through the channel. This can be used to either switch on or switch off an electronic circuit.
The FDD3860 also provides a high level of flexibility due to its alternate sources and drain connections. This allows the FDD3860 to be used in a wide range of applications. It is also very efficient and can provide up to 60mV of on-state power dissipation.
The FDD3860 is a widely used device in a variety of consumer, automotive, and industrial applications. It can be used for switching low-level signals such as AC signals, DC signals, or PWM signals. It is also used for switching inductive loads, such as those used in motor applications. The FDD3860 is also often used in power electronic applications due to its power switching capabilities and fast switching speed.
Each of the applications mentioned above is possible due to the working principles of the FDD3860. It is a semiconductor device that is capable of providing high-level switching of high-voltage circuits. This device can be efficiently and effectively used to provide switching capabilities in a wide range of devices and circuits. As such, it is a popular choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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