FDD3580

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The FDD3580 MOSFET is a single, symmetrical, N-type field effect transistor based on an advanced Very-Low-Threshold (VLT) process. This transistor is designed for the highest efficiency and maximum output at high frequency operation. It is capable of supplying high current density with low gate drive requirements due to its low drain-to-source capacitance. The FDD3580 is designed for use in a wide range of applications, including power management and switching.

The FDD3580 MOSFET is a three terminal device, with a gate, source, and drain. The gate is the control terminal of the transistor, and it is used to control the current flowing through the device. The source is the input terminal, and it is where the input power is applied to the device. The drain is the output terminal of the device, and it is where the output power is connected to the load. The FDD3580 MOSFET is a voltage-controlled device, meaning that the amount of current flowing through the device is controlled by the gate voltage.

The FDD3580 MOSFET is a high performance, high current device, capable of supplying up to 110mA with a low gate drive of 1.8V. It has a low on-resistance (RDSON) of 0.18Ohm, and a low threshold voltage of 0.4V. This low voltage operation enables the device to be used in applications such as power amplifiers and voltage regulators, which require high current and precise control. The FDD3580 also has a low input capacitance, making it ideal for high speed switching applications.

The FDD3580 MOSFET is highly efficient, with a high Max Load current rating and low power consumption. This makes it suitable for applications such as motors and power converters, which require high current operation with low power consumption. The FDD3580 has a low gate charge, which makes it ideal for high frequency switching applications. The low gate capacitance and low RDSON also make it well suited for power switching.

The FDD3580 MOSFET is also highly reliable and robust, with a high temperature operating range of -55°C to 175°C, ensuring that the device can be used in extreme temperature conditions. The device also has a high electrostatic discharge (ESD) protection to protect against damage due to static electricity. The FDD3580 MOSFET is also halogen free, making it environmentally friendly.

Overall, the FDD3580 MOSFET is an excellent choice for a wide variety of applications, such as power management, switching, and motor control. Its low RDSON, low gate capacitance and low voltage operation make it ideal for both high current and high speed applications. Its high temperature range, high ESD protection, and halogen-free nature makes it an Eco-friendly option. The FDD3580 MOSFET is designed for robust and reliable operation in a wide range of applications.

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