FDD3N40TF Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDD3N40TF is commonly used as an enhancement mode field effect transistor in a variety of power applications, such as high-frequency switching, lightning, ballast control, and battery management. In addition, they can also be used in low frequency, low power applications such as linear motor control, power sequencing, and reference circuit management. The FDD3N40TF is designed to be a low voltage, low power transistor with excellent switching characteristics, enabling fast switching at low voltage levels.

The FDD3N40TF is a N-channel enhancement-mode field-effect transistor (Word FET). They are designed to handle a maximum drain-source voltage of 40 volts, allowing the use of higher voltages in the base and drain of the device. The source of these transistors is connected to the drain, allowing the transistor to be used as a low-voltage switch. This is sometimes referred to as a “floating gate” transistor, due to the fact that the floating gate control terminals are sometimes connected to the source.

The FDD3N40TF utilizes an insulated-gate bi-polar transistor (IGBT) structure, wherein a heavily doped N-type layer is provided on a lightly doped N-type layer. The lightly doped layer provides a good interface for both current and heat conduction, while the heavily doped layer allows current to flow quickly and with low resistance. When the gate voltage is applied, the transistor acts as a resistor, controlling the drain current flow.

The field effect transistor is controlled by the gate voltage. When the gate voltage is low, the transistor is in OFF state. In its OFF state, the transistor drains no current, acting as an open switch. When the gate voltage is increased, the transistor becomes an on state. Now, the transistor allows current to flow in the circuit, acting as a closed switch. This switching is called carrier injection, and it is the most important characteristic of FETs.

The FDD3N40TF uses a P-channel MOSFET structure. This allows the transistor to work at very low gate voltages – less than 0.5 volts. It also allows the transistor to deliver a low on-state resistance of about 5.5 volts. This means that it allows current to flow at low voltages, making it an excellent switch for low-power applications.

In addition, the FDD3N40TF offers excellent switching characteristics. It allows very fast switching speeds, allowing the use of higher frequencies in applications such as motor control and power sequencing. It also has a low gate capacitance and gate-to-drain capacitance, making it suitable for high-frequency switching applications.

The FDD3N40TF can be used in a variety of applications, ranging from low power to high frequency. It is a versatile device, offering excellent switching characteristics and low on-state resistance. It can be used in a variety of motor control, power sequencing and reference circuit management applications.

The specific data is subject to PDF, and the above content is for reference