FDD3670

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The FDD3670 MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a single transistor device that is capable of switching high-power loads with ease. The FDD3670 is a N-channel enhancement mode power MOSFET, specifically designed to be used in power management applications such as motor drives, solar inverters, and high-power switching applications.

The FDD3670 is ideal for turn-on and off operations of heavy loads such as motors, pumps, and transformers, due to its low on-resistance, high current capability, and low threshold voltage of 2V. It also has very fast switching capabilities, enabling it to turn on and off heavy loads quickly, making it an ideal switch for applications that require rapid switching. The FDD3670 is also RoHS compliant, making it a safer option than other products on the market that are not.

FDD3670 Application Field

The FDD3670 is suitable for a wide range of power applications, such as motor drives, solar inverters, and high-power switching applications. It can be used in variable speed motor controllers, DC-DC converters, power switching for LCD TVs, supplying power to thermal printers, and even in electric vehicles. Its use in solar inverters is vital, as it can efficiently handle the transformation from high voltages to lower voltages to safely operate equipment. It can also be used in uninterruptible power supplies (UPS) to rapidly switch power sources in case of an outage.

FDD3670 Working Principle

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a three terminal device that switches the flow of current through its terminals. In the FDD3670, the drain and source terminals are where the current enters and exits the device. The gate terminal is used to control the flow of current through the device. When a voltage is applied to the gate terminal, it creates an electric field within the device that attracts electrons and creates a conductive channel between the drain and source terminals. This is known as the “on state” and allows current to flow through the FDD3670. When the voltage is removed from the gate terminal, the electric field is removed, and the device turns “off”. This turns off the current flow between the drain and source terminals, preventing current from flowing through the device.

The FDD3670 is a N-channel enhancement mode power MOSFET, meaning that it does not require a higher gate voltage than the source voltage for the device to turn on. It only requires a voltage that is slightly positive over the source voltage (the threshold voltage) to turn the device on and effectively control the conduction level. Conversely, it is fully turned off by the absence of the gate voltage, which then allows the device to completely isolate the drain from the source.

Conclusion

The FDD3670 is a single channel MOSFET specially designed for use in power applications. It is ideal for motor drives, solar inverters, and high-power switching applications, due to its low threshold voltage and fast switching abilities. It can efficiently handle the conversion of high voltages to lower voltages and is suitable for power switching on LCD TVs, thermal printers, uninterruptible power supplies and electric vehicles. Additionally, it is RoHS compliant, making it a reliable and safe choice for power applications.

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