FDD3672 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDD3672 is a monolithic N-Channel enhancement mode vertical DMOS field effect power transistor, which is specifically designed to minimize the on-state resistance while providing superior switching performance and high avalanche energy strength. It has a single-gate structure and uses bulk/notch technology to reduce the on-resistance. Featuring a low voltage drive and a low gate charge, the FDD3672 is suitable for a variety of switching applications.

FDD3672 application fields are wide, including but not limited to automotive, power supplies, audio power amplifiers and class D amplifiers. In addition, it can be used in AC/DC rectifiers, high current voltage controllers, switched power supplies, HVAC controls, motor controls and other areas which require low on-resistance.

As mentioned above, FDD3672 is a monolithic N-Channel enhancement mode vertical DMOS field effect power transistor. It works based on the principle known as the field-effect principle. The field effect principle states that the behavior of a semiconductor element is determined by the electric field established by its gate electrode. In particular, when a voltage is applied to the gate of the FDD3672, the electric field will create a region of low resistance in the channel of the device, allowing current to flow between the source and drain.

Apart from the field effect principle, FDD3672 also relies on drain-source voltage dependent gate and internal parasitic capacitance in order to control the conduction of current. The drain-source voltage dependent gate is responsible for controlling the amount of current flowing between the source and drain of the device. When a voltage is applied to the gate of the FDD3672, the gate will change its resistance depending on the amount of voltage applied. This is known as the gated resistance regulators. The internal parasitic capacitance is responsible for controlling the amount of drain-source charge stored in the device. When a negative gate voltage is applied, the internal capacitance will allow an increase in the drain-source current.

Overall, FDD3672 is a single gate field effect power transistor with a low on-resistance and high avalanche energy strength. It is capable of controlling the amount of current flowing between its source and drain, due to its use of the field effect principle and drain-source voltage dependent gate. It can be used in a wide variety of applications, such as automotive, power supplies, audio power amplifiers, rectifiers, and HVAC controls.

The specific data is subject to PDF, and the above content is for reference