| Allicdata Part #: | FDD3706FSTR-ND |
| Manufacturer Part#: |
FDD3706 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 20V 14.7A D-PAK |
| More Detail: | N-Channel 20V 14.7A (Ta), 50A (Tc) 3.8W (Ta), 44W ... |
| DataSheet: |  FDD3706 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-PAK (TO-252AA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 44W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1882pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 4.5V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 16.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14.7A (Ta), 50A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDD3706 is a N-Channel MOSFET siingle chip device with high-reliability, ultra-low on-resistance, and low threshold voltage. It is an ideal solution for power conversion system such as switch mode power supply, DC-DC converter, and laptop adapter.
This MOSFET device is built with a very thin silicondioxide layer between metal oxide gate and silicon substrate to control the flow of charge. The metal oxide gate acts as an insulated gate, which controls the flow of electric current. This MOSFET device has high input impedance and low on-state resistance, therefore it can offer high efficiency and good thermal performance.
The FDD3706 N-channel MOSFET has a wide range of applications, including power conversion systems, circuit protection, switching power supplies, DC-DC converters, laptop adapters, power amplifiers, motor control, and electron emitter devices. It has a drain to source breakdown voltage of 60V and a continuous drain current (single pulse) of 20A for 12V operating voltage.
The working principle of FDD3706 N-channel MOSFET is similar to the other types of MOSFETs. The flow of charge is controlled by the electric field and physical barrier between the gate terminal and the drain and the drain and the source terminals. The gate voltage is applied to the gate terminal to create an electric field that attracts and repels current carriers (either electrons or holes) for the conduction path in the desired direction.
When the gate voltage is less than the threshold voltage, the channel is pinched off and no current can flow between the source and the drain. When the gate voltage is greater than the threshold voltage, a channel is formed between the source and the drain and the current starts to flow between the source and the drain. The current flow is controlled by the gate voltage. By adjusting the gate voltage, the current flow can be controlled.
FDD3706 N-channel MOSFET is a versatile electrical switch device that can be used in many applications. Its high-reliability, ultra-low on-resistance, and low electric threshold make it an ideal choice for modern power conversion systems. This device is well suited for applications that require low on-state resistance and high efficiency.
The specific data is subject to PDF, and the above content is for reference
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