Allicdata Part #: | FDD3672-F085TR-ND |
Manufacturer Part#: |
FDD3672-F085 |
Price: | $ 0.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 44A DPAK-3 |
More Detail: | N-Channel 100V 44A (Tc) 144W (Tc) Surface Mount TO... |
DataSheet: | FDD3672-F085 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.42357 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 144W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1635pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | Automotive, AEC-Q101, UltraFET™ |
Rds On (Max) @ Id, Vgs: | 47 mOhm @ 21A, 6V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDD3672-F085 is an advanced level FET (Field Effect Transistor) which is used in a variety of applications, such as power management, consumer electronics and industrial automation. It is particularly well-suited to applications in which a high degree of control is required over power dissipation, as well as to those in which space is limited.
A Field Effect Transistor (FET) is a type of transistor that works by controlling an electric field conducted through a semiconductor to control current flow. FETs are divided into two main categories, those that use P-type materials and those that use N-type materials. The FDD3672-F085 is an N-type FET, meaning that it uses an N-channel piece of semiconductor material to regulate current flow.
The FDD3672-F085 has an integrated dynamic body diode, which helps to optimize the control of power dissipation. The FET is highly efficient in its operation and can handle higher levels of current than other FET types or transistor designs. The FDD3672-F085 is also capable of rapidly switching between different power levels, which makes it well suited to applications requiring precise and rapid control.
The FDD3672-F085’s working principle is based on the formation of a conductive channel between the gate and the source of the FET. This channel acts as a voltage divider, allowing the FET to regulate the amount of current flowing through the circuit. The FET works by controlling the gate voltage in order to create the necessary voltage drop and current flow.
The FDD3672-F085 is used in a variety of applications, including power management, consumer electronics, automotive systems and industrial automation. Its dynamic body diode gives it a significant advantage over other power control solutions, as it is able to quickly and precisely regulate current flow. The FET is also capable of maintaining high levels of accuracy, even when power levels are constantly changing.
The FDD3672-F085 is an efficient and reliable solution for power management and control. Its dynamic body diode and quick switching times make it an ideal choice for applications which require high levels of accuracy, precision and control. The FET also has a high degree of power dissipation efficiency, allowing it to handle higher levels of current with less heat. Finally, its small size also makes it a great choice for applications where space is at a premium.
The specific data is subject to PDF, and the above content is for reference
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