Allicdata Part #: | FDD3N40TMTR-ND |
Manufacturer Part#: |
FDD3N40TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 2A DPAK |
More Detail: | N-Channel 400V 2A (Tc) 30W (Tc) Surface Mount D-Pa... |
DataSheet: | FDD3N40TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 3.4 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDD3N40TM is a type of MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) that is used to amplify and switch electronic signals. It has a variety of applications in different areas such as switching, amplification, and voltage regulation. This article will discuss the application field and working principle of the FDD3N40TM.
Application Fields of the FDD3N40TM
The FDD3N40TM is suitable for use in a wide range of applications due to its low on-state resistance and high-speed switching capability. It is often used in switching power supplies, motor control, and DC-DC converters that require low power losses during operation. It is also used for current amplifications as well as for on/off switching in motor control systems. Additionally, it is used in linear and switching amplifiers, switching circuits, and logic circuits where fast switching is required.
Working Principle of the FDD3N40TM
The basic principle of operation of the FDD3N40TM is based on the flow of current through its gate, source, and drain terminals. The gate terminal acts as the control input, while the source and drain terminals are the output. When a voltage difference is applied between the gate and source terminals, it results in a gate-to-source voltage known as the gate threshold voltage (Vth). This voltage is used to control the flow of current between the source and drain terminals. The greater the gate-to-source voltage, the greater the amount of current that can flow through the device.
The FDD3N40TM also has an internal resistance known as the on-state resistance (Ron), which represents the total resistance of the device when it is in the “on” state. This resistance is mainly influenced by the size of the device, its transistor type, and the doping levels of its internal layers. Lower Ron values result in more current flowing through the device, while higher values result in less current flowing.
Finally, the FDD3N40TM also has a switching threshold voltage. This voltage is the minimum voltage that must be applied to the gate terminal before the device will turn on. When the gate-to-source voltage is equal to or greater than the switching threshold voltage, the device will be switched on. This feature is useful for circuits that require precise switching capabilities.
Conclusion
The FDD3N40TM is a versatile and reliable device that is suitable for use in a variety of electronic systems. Its low-on-state resistance, high-speed switching capability, and precise control of current through the gate-to-source voltage make it an ideal choice for use in switching power supplies, motor control, and linear and switching amplifiers. The principles discussed in this article are fundamental to the operation of the FDD3N40TM, and understanding these principles is essential for using the device effectively in any given application.
The specific data is subject to PDF, and the above content is for reference
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