Allicdata Part #: | FQB20N06LTM-ND |
Manufacturer Part#: |
FQB20N06LTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 21A D2PAK |
More Detail: | N-Channel 60V 21A (Tc) 3.75W (Ta), 53W (Tc) Surfac... |
DataSheet: | FQB20N06LTM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 53W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQB20N06LTM is a type of N-channel enhancement mode metal–oxide–semiconductor field-effect transistor (MOSFET). It is used in applications such as switching, multiplexing, and power conversion. The device is available in surface mount, leadless, and can-packaged configurations. The FQB20N06LTM is a high-performance MOSFET that operates over a wide temperature range and provides excellent on/off switching capability.
The FQB20N06LTM is designed to provide a reliable, high-performance solution for a wide variety of switching, multiplexing, and power conversion applications. It features a low gate capacitance, low on-resistance, high breakdown voltage, high speed switching, and high surge capability. It is also designed to withstand harsh environmental conditions, including temperature, humidity, and salt. These characteristics make the FQB20N06LTM ideal for applications in automotive, industrial, telecommunications, and consumer electronics.
The FQB20N06LTM operates through the principle of enhancement mode MOSFET. That is, the transistor is "normally on" when no current is applied to the gate. This means that when no current is supplied to the gate, no voltage is needed to "turn on" the transistor. Conversely, once current is applied to the gate, the transistor turns on and allows current to flow through the drain-source channel. This is the same mechanism of operation as both the p-channel and n-channel MOSFETs.
The FQB20N06LTM features a low gate capacitance, low on-resistance, and high breakdown voltage, making it ideal for switching applications. The transistor is capable of switching at high speeds, allowing it to quickly switch between on and off states. Additionally, it is designed to withstand harsh environmental conditions, such as temperature, humidity, and salt. These features make the FQB20N06LTM extremely reliable and suitable for a wide range of applications.
The FQB20N06LTM is a versatile MOSFET that is applicable in a wide range of applications, including switching, multiplexing, and power conversion. The device’s low on-resistance and high breakdown voltage make it suitable for switching and multiplexing applications. Additionally, its wide temperature range and high surge capability make it an ideal choice for power conversion applications. Overall, the FQB20N06LTM is an excellent choice for a variety of switching, multiplexing, and power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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