FQB22P10TM-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FQB22P10TM-F085TR-ND |
Manufacturer Part#: |
FQB22P10TM-F085 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 22A D2PAK |
More Detail: | P-Channel 100V 22A (Tc) 3.75W (Ta), 125W (Tc) Surf... |
DataSheet: | FQB22P10TM-F085 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101, QFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 125W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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。The FQB22P10TM-F085 is a type of single Field Effect Transistor (FET) which is used for various applications such as amplifying, switching, and voltage regulation. A FET is a type of transistor which works on the principle of field effect. A FET differs from a conventional transistor in that it is composed of three terminals; the majority of its conduction is between two of the terminals, while a tiny drain-current results from the gate-source voltage.
The FQB22P10TM-F085 is a low-cost, single N-channel enhancement mode FET. It features a wide gate-to-source breakdown voltage range and high speed switching performance. It is composed of a high-end four-layer structure based on a silicon substrate. This construction gives it superior thermal resistance, high voltage stability, and high current-handling capability. As such, it is suitable for use in both military and industrial applications.
The FQB22P10TM-F085 operates on the field effect principle. When the gate-source voltage is applied, the electrons in the drain region (the so-called channel) are attracted to the gate. This creates an electric field supporting the flow of current from the source to the drain. This current flow is proportional to the gate-source voltage. As such, the FET can be used to control the flow of current from source to drain and thus, it can be used as a switch.
The FQB22P10TM-F085 is also used as an amplifier. The FET has a high input impedance, meaning that it will not draw a large current from the signal source even when the input voltage is large. This allows it to be used as an amplifier with high gain and low power consumption, making it ideal for low-power applications such as amplifying audio signals in portable electronic devices.
In addition, the FQB22P10TM-F085 can also be used for voltage regulation. The FET can be used as a variable resistor, in which the resistance value between source and drain is varied by adjusting the gate voltage. This can be used to maintain a constant output voltage even when the input voltage or load current changes, making it ideal for use in voltage regulating systems.
The FQB22P10TM-F085 is a versatile single FET which can be used in a wide range of applications due to its high-end construction, wide gate-to-source breakdown voltage range, and low power consumption. It can be used as a switch, amplifier, or voltage regulator thus making it a useful tool in many areas of electronics.
The specific data is subject to PDF, and the above content is for reference
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