| Allicdata Part #: | FQB24N08TM-ND |
| Manufacturer Part#: |
FQB24N08TM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 80V 24A D2PAK |
| More Detail: | N-Channel 80V 24A (Tc) 3.75W (Ta), 75W (Tc) Surfac... |
| DataSheet: |  FQB24N08TM Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 75W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FQB24N08TM is a high-voltage N-Channel MOSFET that is primarily used in circuit switching, signal transmission, power supply, signal modulation, and loading applications. The FQB24N08TM is designed for use in high voltage applications as well as automotive and industrial applications. It is a very reliable and efficient device.
The FQB24N08TM is a semiconductor device that consists of two terminals, an source and a drain, and a control gate, making it a three-terminal device. It is composed of an N-channel Enhancement Mode MOSFET, which is able to amplify, switch, and linearize signals. This MOSFET is made up of N-channel depletion mode MOSFETs along with a number of doped P-Layer interfaces that act as the enhancement interface on the device.
The FQB24N08TM is a high-voltage MOSFET with an array of features that make it desirable in many applications. For starters, its low gate threshold voltage allows the device to switch very quickly. It also exhibits a high level of reliability and stability, which makes it ideal for use in automotive and industrial applications. Additionally, it has a high breakdown voltage, which is also necessary for high voltage applications.
The working principle of the FQB24N08TM is fairly simple. When no voltage is applied to the gate of the device, it does not allow any current flow through the MOSFET. When a voltage is applied to the gate of the device, it causes a flow of electrons which then causes the MOSFET to be in an on state. This allows current to pass through the MOSFET from the source to the drain.
The FQB24N08TM can be used as a switch, an amplifier, or a linearizer in many different devices. In switching applications, it can be used to switch digital signals on and off. In amplification applications, the FQB24N08TM can be used to amplify small signals. Finally, in linearizing applications, it can be used to linearize signals for better accuracy.
The FQB24N08TM is a great choice for a number of applications due to its high level of reliability, efficiency, and performance. Additionally, due to its low gate threshold voltage, the device can switch very quickly, making it ideal for high-speed applications. The FQB24N08TM is a great choice for a large range of circuit switching, power supply, signal modulation, and loading applications.
The specific data is subject to PDF, and the above content is for reference
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