Allicdata Part #: | FQB2N50TM-ND |
Manufacturer Part#: |
FQB2N50TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 2.1A D2PAK |
More Detail: | N-Channel 500V 2.1A (Tc) 3.13W (Ta), 55W (Tc) Surf... |
DataSheet: | FQB2N50TM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 5.3 Ohm @ 1.05A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB2N50TM is a power Field-Effect Transistor (FET) that belongs to the MOSFET (metal-oxide-semiconductor field-effect transistor) family of transistors. It is both affordable and highly efficient, making it a popular choice for many power-related applications. Understanding the field of application and the working principle of a FQB2N50TM helps to determine if it is a suitable device for a given application.
Application Field
FQB2N50TM is commonly used in applications that require a low on-resistance and low gate-charge. It is mainly used for switching and amplification purposes, such as in the power supply, lighting and motor control, and audio interface applications. It can also be used in automotive applications where its superior heat dissipation properties make it an ideal choice. The device has a wide temperature range, allowing it to operate in both hot and cold temperatures. Furthermore, it has high-voltage blocking capability, allowing it to handle high voltage surges and prevent damage.
Working Principle
The FQB2N50TM is a three-terminal device that uses a source, gate and drain to control the flow of current through the device. The source and drain are connected to the power supply, while the gate is connected to the input signal. When a positive voltage is applied to the gate, the transistor opens and allows current to flow from the source to the drain. This is known as an N-channel enhancement-mode FET, as the current is increased in the “on” state. Increasing the voltage on the gate leads to a higher conduction current. If a negative voltage is applied to the gate, then the transistor will shut off and no current will flow. This device also has a body diode that ensures that the current flows through the transistor in only one direction.
The FQB2N50TM is a highly efficient device that can provide excellent performance in a wide range of applications. Knowing the field of application and the working principle of the device helps to determine if it is suitable for a particular application. Furthermore, it is important to ensure that the device is sized and operated appropriately to ensure its safe and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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