FQB22P10TM Discrete Semiconductor Products

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FQB22P10TM is a very popular metal oxide semiconductor field effect transistor (MOSFET). It is used in many applications, including power control and voltage regulation circuits, DC-to-DC converters, radio frequency amplifiers, and as switch drivers in logic circuits.

The FQB22P10TM is a single N-Channel enhancement-mode MOSFET which is built on a Substrate or Self Aligned Drain process. It has a low on-resistance capability of 8.6 Ohm with a minimum drain voltage of 10 VDS, making it suitable for all kinds of applications.

The main function of the FQB22P10TM is to provide MOSFET-type switching without the use of a microcontroller or complex circuitry. It works by allowing an electrical current to pass through an insulated gate when sufficient voltage is applied. The current flowing through the gate will then be used to control the current going through the drain and source. The leakage current of the FQB22P10TM is extremely low, which helps to minimize power consumption.

FQB22P10TM is suitable for a wide range of applications, ranging from voltage control circuits, DC-to-DC converters, and radio frequency amplifiers, to logic device driver and switching circuits. It can also be used in audio amplifiers, motor control applications, digital logic circuity and the like.

The FQB22P10TM is designed for use in high frequencies, operating at a maximum frequency of 4 MHz. It can handle a maximum drain-source voltage of 200 V, and is protected from thermal shock, electric fields, and power transients. It also has an enhanced thermal stability, making it suitable for a wide range of applications.

The FQB22P10TM has a very low input capacitance (Cgs) of 1.9 pf, so it is suitable for use in radio frequency circuits. Its high ESD rating of 10 Vrms makes the device suitable for use in harsh environments. The FQB22P10TM is also compatible with both leaded and lead-free solder joints, making it suitable for use in both through-hole and surface mount designs.

The FQB22P10TM is an excellent choice for applications that require a fast, reliable, and cost-effective MOSFET switch. Its ability to provide high power handling with low power consumption make it a great addition to any circuit design.

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