Allicdata Part #: | FQB20N06TM-ND |
Manufacturer Part#: |
FQB20N06TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A D2PAK |
More Detail: | N-Channel 60V 20A (Tc) 3.75W (Ta), 53W (Tc) Surfac... |
DataSheet: | FQB20N06TM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 53W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB20N06TM is a N-Channel MOSFET commonly used in power electronic circuits. The transistor is manufactured by FQP, and its maximum blocking voltage is 20V with a low gate threshold voltage of 4V. It is designed to operate at a maximum current of 2A with an on resistance of 0.25 and a fast switch-on time of 1.5 ns.
As part of the power MOSFET family, the FQB20N06TM is a type of insulated-gate bipolar transistor (IGBT). It has an insulated gate which helps the transistor switch off quickly when current is no longer needed, which increases the efficiency of the circuit. Due to its low on resistance and fast switching times, the FQB20N06TM is well suited for power control and switching applications, offering low power losses, even at high operating frequencies.
FQB20N06TM is designed as a power MOSFET switch. It has an insulated gate which allows it to provide fast turn-on and turn-off times, making it ideal for power control and switching applications. It also has a low gate threshold voltage, which allows current to flow more easily through the MOSFET, increasing the efficiency of the circuit.
The FQB20N06TM is also designed with an output impedance that is relatively low compared to other MOSFETs. This lower output impedance means that the MOSFET can provide more stable current for switching applications. Additionally, its low on-resistance allows it to operate with low power losses even at high switching frequencies, making it ideal for applications that require high switching speeds.
Finally, the FQB20N06TM is designed with a high current rating, allowing it to handle a larger amount of current than other similar MOSFETs. This makes it well suited for power control applications that require large amounts of current. It is also able to withstand higher voltages, making it suitable for high voltage applications.
In summary, the FQB20N06TM is a N-Channel MOSFET designed for power switching and control applications. It has a low gate threshold voltage, a low output impedance, a high current rating and fast switching times, making it well suited for power control applications. Additionally, its low on-resistance allows it to operate with low power losses even at high switching frequencies and its high voltage rating makes it suitable for high voltage applications.
The specific data is subject to PDF, and the above content is for reference
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