FQB2P25TM

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FQB2P25TM is a type of insulated-gate field-effect transistor (IGFET) developed and manufactured by Fairchild Semiconductor. It is a single, N-channel MOSFET that offers higher current levels, higher reliability, and better max VGS values than comparable MOSFETs on the market. FQB2P25TM is designed for use in power supplies and other high-power switching applications. In this article, we will discuss the application field and working principle of the FQB2P25TM.

Application Field

The FQB2P25TM is an excellent choice for many power supply and other high-power switching applications, including high-reliability power supplies, DC-to-DC converters, motor control, high-current switching circuits, and various other high power switching applications. Since the FQB2P25TM is a single, N-channel MOSFET, it offers higher current levels and better max voltage values than other MOSFETs at similar or lower cost. This makes it ideal for applications that require added assurance of power level and reliability.

Additionally, the FQB2P25TM has a robust 250V rating, which means it can handle large amounts of power with confidence. This makes the FQB2P25TM well-suited for higher current switching applications such as motor control and high-current switching circuits. The MOSFET’s low on-resistance and gate capacitance also make it well-suited for higher frequency applications, such as switching regulators and power inverters.

Working Principle

The FQB2P25TM is a n-channel MOSFET, meaning that it is composed of a substrate made of n-type silicon, with a gate electrode created using gate insulation. When a voltage is applied to the gate it forms an electric field which in turn influences the shape of the substrate’s conductivity so that current can pass through. This “field effect” allows the FQB2P25TM to control the current flow based on the voltage applied to the gate.

The FQB2P25TM also utilizes the “VGS” (gate-source) protection feature, which prevents the device from switching on until the gate-source voltage is below a predetermined maximum value. This prevents the MOSFET from being damaged by excessive voltage, ensuring its longevity in high power applications. The FQB2P25TM’s VGS protection also helps with circuit reliability, as it prevents leakage current during switching events.

The FQB2P25TM also utilizes a “punch-through” design, which reduces switching time and improves EMI performance. This design also helps to minimize gate capacitance, which further improves the MOSFET’s switching speed. Additionally, the FQB2P25TM’s silicon dioxide layer provides increased reliability, resulting in fewerfailures and better ESD protection.

Another advantage of the FQB2P25TM is its high Avalanche breakdown voltage. The device has a breakdown voltage of 150V, which is significantly higher than comparable MOSFETs on the market. This allows the device to handle higher voltages with confidence, and is particularly useful for switching power supplies and pulsed applications.

Finally, the FQB2P25TM also boasts excellent thermal performance. The device can operate at -55°C to 150°C, making it well-suited for extreme and harsh environments. The device also has a low thermal resistance, which helps to improve its efficiency and reduce heat dissipation.

Conclusion

The FQB2P25TM is an excellent choice for many power supply and other high-power switching applications. The device has excellent electrical, thermal, and high breakdown voltage characteristics, making it well-suited for use in extreme and harsh environments. The device also has a low thermal resistance, which helps to improve its efficiency and reduce heat dissipation, making it an ideal choice for high-power switching applications.

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