FQB27P06TM Discrete Semiconductor Products

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The FQB27P06TM is a Type-P Enhancement Mode N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by ON Semiconductor. It is particularly suited to low-voltage, high-speed switching applications within consumer electronics, automotive and industrial sectors, as well as other systems requiring high input impedance and a low ON resistance. The FQB27P06TM has a Vds range of including 0. V (Max) and the Rds(ON) is 6. @ 12V. It is packaged in the 14-Lead PowerPAK standard SOIC package.

A MOSFET is a three-terminal semiconductor device, built from a metal-oxide-semiconductor. The three terminals are the source, gate, and drain. The source and drain are connected to different sides of the semiconductor structure, and the gate can be used to control the flow of current between the source and the drain. When a small electric potential is applied to the gate, current can flow between the source and drain, depending on the applied potential. The device exhibits a phenomenon known as the ‘body effect’ which reduces the device’s transconductance as the gate-source voltage increases. This reduces the gate-source capacitance, which in turns influences the switching speed of the device.

The FQB27P06TM is a single, enhancement mode MOSFET, which operates with a typical gate voltage of 7V, which helps to reduce current leakage and increase input impedance. The low RDS(ON) of 6. @ 12V also helps reduce power consumption, which can be vital in some applications. Furthermore, the small gate-source and gate-drain capacitances of the device (Cs and Cr) helps to reduce power consumption further, as the gate drive can be reduced and still result in high performance switching. The Cs and Cr are 0.17pF and 0.4pF respectively, at 4V.

The FQB27P06TM also has a low output capacitance and trickle current in comparison to other single MOSFETs, making it ideal for applications, such as relays, solenoids and motor drivers. These drivers require a low input impedance when controlling high loads and a low resistance when switching large currents. The FQB27P06TM has a drain-source resistance of 6. (max), which is balanced with a low gate threshold, so it can provide the performance required. Its operation is suitable for high frequency switching and its low gate-source capacitance makes it suitable for high-speed digital applications.

The FQB27P06TM is also suitable for applications, such as bidirectional motor controllers and other power converters, where a low RDS(ON) helps to reduce switching losses, increase efficiency and reduce the size and cost of the system. The design of the device has been optimised for such applications, allowing the device to control a large range of current and voltages, with a low gate threshold, reducing the chances of erroneous switching.

In conclusion, the FQB27P06TM is an ideal choice for applications requiring low power, high speed switching and low input impedance. The device’s low RDS(ON) and gate-source and gate-drain capacitances allow for efficient and cost-effective operation in a wide range of applications, including consumer electronics, automotive and industrial systems. In addition, its optimised switching design and low gate threshold ensures the device is suitable for applications with high frequency switching requirements.

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