FQB27N25TM-F085 Discrete Semiconductor Products

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The FQB27N25TM-F085 transistor is a high-performance, low-power, N-channel insulated Gate Bipolar Transistor (IGBT) designed for high-frequency and high-speed power applications. It features very low switching losses and low on-state resistance, making it ideal for applications where efficiency and high-frequency performance are important. The FQB27N25TM-F085 is a particularly well-suited solution for power switches, motor control, and UPS systems.

Application Field and Features

The FQB27N25TM-F085 is primarily used in high-frequency, high-speed power applications. The device has a broad range of applications, including power supplies, motor control, UPS systems, and other power switching applications. It is characterized by its high-frequency performance, low switching losses, high on-state current ratings, low on-state resistance, and low power dissipation. It has a wide peak current rating of 27A, and a continuous current rating of 25A.

The FQB27N25TM-F085 is also suitable for automotive and industrial applications due to its superior EMI/EMC performance. It has very low noise characteristics and is compliant with the AEC-Q101 automotive standards. Furthermore, the FQB27N25TM-F085 can be operated at temperatures up to 175°C, enabling it to operate in the most extreme conditions.

Working Principle

The FQB27N25TM-F085 is a N-channel IGBT that follows the basic structure of a MOSFET. It essentially consists of two back-to-back MOSFETs, with a diode between the two source terminals. This diode is reverse-biased during commutation, and forward biased during conduction. The lower MOSFET works in depletion mode, while the upper MOSFET works in enhancement mode.

When the gate voltage is below the device’s threshold voltage, both transistors remain off. When the gate voltage increases past the threshold voltage, the bottom transistor turns on and the upper transistor turns off. This results in the flow of current from the drain to the source. As more gate current is applied, the lower transistor’s resistance decreases, and the upper transistor’s resistance increases. This causes an increase in the drain-to-source current as the gate voltage is increased.

The FQB27N25TM-F085 combines the fast switching speeds of a MOSFET with the low on-state resistance of a bipolar junction transistor, resulting in low switching losses. The low power dissipation of the FQB27N25TM-F085 makes it an ideal choice for applications where high responsiveness and long operation life are needed in a wide temperature range.

Conclusion

The FQB27N25TM-F085 is a high-performance, low-power, N-channel insulated Gate Bipolar Transistor designed for power applications that require fast switching speeds and low on-state resistance. The device is suitable for a wide range of applications, including power supplies, motor control, UPS systems, and other power switching applications. It is characterized by its high-frequency performance, low switching losses, high on-state current ratings, low on-state resistance, and low power dissipation. The FQB27N25TM-F085 combines the performance of a MOSFET and a bipolar junction transistor to provide excellent performance and longevity in high-temperature applications.

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