Allicdata Part #: | FQB27N25TM_AM002-ND |
Manufacturer Part#: |
FQB27N25TM_AM002 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 25.5A D2PAK |
More Detail: | N-Channel 250V 25.5A (Tc) 3.13W (Ta), 180W (Tc) Su... |
DataSheet: | FQB27N25TM_AM002 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2450pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 12.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25.5A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQB27N25TM-AM002 field effect transistor is a single chip MOSFET manufactured by FSTIX. This MOSFET can be used in a wide range of devices and applications. Its working principle is based on the field effect transistor (FET) effect, which can be described in simple terms as the change of a device\'s conductivity when a specific electric field is applied to it.
The FQB27N25TM-AM002 is a general purpose enhancement mode MOSFET with pulsed drain current capability of 25A. It is designed with a remarkably low RDS(ON) of 199mΩ when operating at 25A and 10V drain-source voltage. This makes it ideal for applications where low ON-state resistance is important, such as motor control and switching power amplifiers.
This MOSFET also supports a wide range of gate and drain-source voltage combinations. It can be used at up to -30V for the gate and up to 100V for the drain-source. The maximum tolerant temperature is up to 175°C.
The FQB27N25TM-AM002 MOSFET can be used in various applications, such as in PA (Power Amplifying) systems, audio systems, power supply applications, automotive systems and digital circuits. It\'s gain (the open-circuit voltage transfer ratio of the device) provides a wide range of power gain for high power applications. The FQB27N25TM-AM002 also provides excellent switching performance with low EMI, making it suitable for power converters.
The working principle of the FQB27N25TM-AM002 is that the gate pin allows electrons to move between the drain and source pins. When a positive voltage is applied to the gate pin, the current flow between the drain and source increases. Conversely, when a negative voltage is applied to the gate pin, the current flow between the drain and source decreases.
The FQB27N25TM-AM002 MOSFET\'s excellent electrical characteristics make it a suitable choice for many applications. It is well suited for high power switching applications, as well as for high current DC-DC converter and regulator control.
This FQB27N25TM-AM002 MOSFET is a great choice for applications that require high current and/or low EMI such as motor control, amplifier (PA) circuits, power supply, and digital circuits. It\'s low resistance, fast switching time and wide operating temperature range make it ideal for use in various industrial and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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