Allicdata Part #: | FQB2N90TM-ND |
Manufacturer Part#: |
FQB2N90TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 2.2A D2PAK |
More Detail: | N-Channel 900V 2.2A (Tc) 3.13W (Ta), 85W (Tc) Surf... |
DataSheet: | FQB2N90TM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 7.2 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQB2N90TM is a 900V N-channel power field-effect transistor (FET) that has been designed for use in industrial motor drives. The FQB2N90TM is intended for high power applications and is available in a small DPAK package. It is designed to provide high performance and reliability in applications such as servo drives, motor drives, and robotics. The FQB2N90TM is a high-side, high voltage, N-channel MOSFET designed for use in high power applications such as motor drives, servo drives, and robotics.
The FQB2N90TM utilizes a vertical N-channel trench structure for increased efficiency and improved safety. The N-channel trench structure allows the FQB2N90TM to withstand a drain-source voltage up to 900V and still maintain a low on-state resistance. This makes it an ideal device for high-voltage applications. In addition, the FQB2N90TM is designed to provide improved thermal performance and reduced power consumption. The device also has excellent current handling capability, allowing it to operate at high current densities.
The FQB2N90TM utilizes a metal-oxide-semiconductor (MOS) structure and has a built-in gate protection resistor to reduce the risk of gate-induced drain leakage (GIDL). This reduces the risk of unexpected voltage drops that can occur with traditional MOSFETs. Additionally, the FQB2N90TM utilizes a special patented PTFE punch that ensures a low contact resistance and low thermal dissipation. This further improves the performance of the device and allows it to operate for an extended period of time without degrading.
The FQB2N90TM can be used in a number of different applications, such as motor drives, servo drives, robot controllers, and in power electronics applications. In motor drive applications, the FQB2N90TM can be used to control the speed and direction of a brushless DC motor. The device can also be used to control the speed and direction of a brushless DC servomotor, or as a voltage source in a switch mode power supply. The FQB2N90TM can also be used in robotic applications as part of a controller, allowing the robot to perform tasks such as moving, lifting, and rotating heavy objects.
In order to operate properly, the FQB2N90TM must be connected to a driver circuit. The driver circuit provides the necessary control signals to the FQB2N90TM, and is typically designed to provide a low-impedance channel for the output voltage. The FQB2N90TM is typically connected to the input of the driver circuit, and the output of the driver circuit is then connected to the load. This arrangement allows for precise control of the FQB2N90TM and provides a stable operating point.
The FQB2N90TM is designed to provide high performance, reliability, and cost-efficiency in a range of industrial applications. The device is capable of withstanding up to 900V drain-source voltage, making it an ideal solution for high voltage applications. In addition, the device provides improved thermal performance and low contact resistance which allows it to reduce power dissipation and extend operating life.
The specific data is subject to PDF, and the above content is for reference
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