FQB25N33TM-F085 Discrete Semiconductor Products

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The FQB25N33TM-F085 is a single, n-channel, power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The device operation can be described by a few simple parameters and principles, making it an ideal choice for a variety of applications.

Physical Dimensions of the FQB25N33TM-F085

The FQB25N33TM-F085 is housed in an ultra-small MOSFET package measuring 4.5 x 9.5 mm (1.77 x 3.74 in). Its weight is only 1 milligram, making it extremely lightweight and allowing for very easy installation and handling. The very low power consumption (typically only 0.43mW) of the MOSFET also helps to reduce its overall size.

Features of the FQB25N33TM-F085

The FQB25N33TM-F085 is a high-speed, low-distortion, low-power MOSFET. Its specifications include a gate voltage of +3V to -3V, and a drain-source breakdown voltage of 25V. It also has a maximum drain current rating of 33A, and a drain-source on-resistance of 85mΩ and a power dissipation of 225W. Another key feature of this MOSFET is its low input-capacitance and Miller-capability, which makes it ideal for high-speed switching applications.

Applications of the FQB25N33TM-F085

The FQB25N33TM-F085 is a versatile MOSFET with a wide range of applications. It is most commonly used in switchmode power supplies, LED drivers, auto battery chargers and solar panel inverters, as well as other high-performance switching power applications. It is also utilized in Power-over-Ethernet systems, fibre-optic communications and industrial automation applications, to name a few.

Working Principles of the FQB25N33TM-F085

The FQB25N33TM-F085 is an n-channel MOSFET, meaning that it can be used to switch current between the two pins of the device. It has two main modes of operation: Enhancement mode (E-mode) and Depletion Mode (D-mode). In the E-mode, a positive voltage applied to the gate (absent at the source) creates an electric field, which induces a shallow region of electrons in the channel between the drain and the source. This allows current to flow from the drain to the source. In Depletion Mode, a negative gate voltage creates a reverse electric field, depleting the electrons from the channel, blocking any current flow. The switching characteristics of the FQB25N33TM-F085 are determined by its gate-source voltage, channel width and drain-source voltage.

Conclusion

The FQB25N33TM-F085 is a single, n-channel power MOSFET with a wide range of applications from switchmode power supplies to industrial automation systems. Its small size, low power consumption, and excellent switching characteristics make it an ideal choice for high-performance switching power applications. Its two main modes of operation (Enhancement Mode and Depletion Mode) enable it to effectively switch current between its two pins, making it an invaluable component in many electrical and electronic systems.

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