FQB50N06TM

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.75W (Ta), 120W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1540pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	41nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	22 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FQB50N06TM Application Field and Working Principle

The FQB50N06TM is a type of MOSFET (metal-oxide-semiconductor field-effect transistor). It is part of a series of advanced power MOSFETs known as the Easy 2–11 series and is designed to reduce switching loss, increase power efficiency and simplify circuit layout and design. Such transistors are widely used in consumer electronics, automotive electronics, and power conversion, among other applications. In this article, we will explore the application fields and the working principles of the FQB50N06TM.

Application Field of FQB50N06TM MOSFETs

MOSFETs, and specifically the FQB50N06TM, are used in a variety of industries to reduce energy losses and improve the efficiency of electric circuits. The FQB50N06TM is able to control the flow of high current, making it an ideal choice for automotive and consumer electronics.For onboard automotive applications, such as power steering, electric power steering (EPS) and electric power brakes (EPB), the FQB50N06TM can provide critical power management to improve motor and battery efficiency. The FQB50N06TM can also be used in electric vehicles, such as electric pumps to help improve system performance and life as well as reduce power loss.In consumer electronics, the FQB50N06TM can be used to provide power to electronic components in TVs, computers, and other consumer devices. Its low on-resistance and fast switching speed allow it to reduce energy losses in power conversion, resulting in improved system efficiency.

Working Principle of FQB50N06TM MOSFETs

The FQB50N06TM is a type of MOSFET. As a field-effect transistor, its purpose is to control the flow of electric current between two terminals, known as the source and drain, with a third terminal, known as the gate.In a MOSFET, the gate terminal is insulated from the source and drain terminals, creating a so-called “pinch-off voltage”, which reduces the current flow between the terminals. A bias voltage applied to the gate terminal changes the pinch-off voltage, allowing more or less current to flow between the source and drain terminals. This makes the MOSFET an effective switch and makes it possible to control the flow of current between the terminals with the bias voltage.The FQB50N06TM has a number of features that make it especially useful. For example, its low AC on-resistance (RON) can reduce losses in power conversion, making it more efficient than other transistors. It also has a fast switching speed, allowing it to respond quickly to changes in the input voltage and reduce latency. Finally, its low gate-source threshold voltage makes it easier to drive, allowing for simpler circuit designs.

Conclusion

The FQB50N06TM is a power MOSFET optimized for use in a variety of applications. This type of transistor is well-suited for automotive and consumer electronics applications, as its low on-resistance and fast switching speed can help to significantly reduce energy losses in power conversion processes. Furthermore, its low gate-source threshold voltage makes the FQB50N06TM easier to drive, simplifying circuit designs.

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