FQB5N60TM

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The FQB5N60TM is a power MOSFET (metal–oxide–semiconductor field-effect transistor) that is manufactured by Fairchild Semiconductors and is part of their OptiMOS series. It is designed as an enhancement mode lateral N-channel power field effect transistor (FET) with a “T” suffix. The FQB5N60TM offers a low on-resistance and high current capability.

The FQB 5n60TM can be used in many applications, including those where high current handling is necessary such as power supplies for audio amplifiers, power supplies for personal computers and CAD workstations, battery powered applications, and other power switching applications like low voltage circuits, DC-DC converters, solenoids, and relays.

The FQB5N60TM is suited for Step-Down (Buck) topology applications and helps to reduce power losses due to low R_dson. It has several protection features such as temperature measure, protection against overcurrent and ESD protection, which makes it an ideal device for many applications.

The FQB 5n60TM has a very low on-resistance of 0.053 Ohms at 1.8V and 4.5V. This means that the transistor can draw relatively large amounts of current in order to generate high power outputs, making it more efficient than other MOSFETs. It also has a low gate charge of 6.6nC, which is lower than the average MOSFETs, thus allowing for faster switching times and better performance in high frequency operations.

The FQB 5n60TM has a relatively small package size of 5mm x 11.3mm and its power dissipation capability of 1.55W at the maximum junction temperature helps to keep the device cooler. The FQB 5n60TM has a maximum drain-source voltage of 500V and a maximum drain current of 175A, making it suitable for applications such as power switching for high power applications, high frequency synchronous rectifying, and high current DC-DC converter applications.

The working principle of FQB5N60TM is based on an N-channel MOSFET. A drain-source voltage is applied between two metal oxide semiconductor (MOS) regions and a gate voltage is applied to the gate terminal of the FET. This gate voltage causes electrons to be attracted to the metal oxide layer, which will increase the overall current flow between the source and the drain. The more the electrons attracted, the greater the current flow, allowing more power to be delivered through the FET.

The FQB5N60TM is also designed to be highly reliable, with a maximum drain-source resistance of 0.2 Ohms and an Avalanche energy capable of 50mJ minimum. It has a low gate threshold voltage of 1.8V and a low gate-source leak current of less than 1uA. Additionally, it is rated for a drain-source breakdown voltage of 500V, making it suitable for high voltage applications. With all these features, the FQB5N60TM is excellent for applications that require high power with tight tolerances.

In summary, the FQB5N60TM is a very reliable and efficient N-channel power MOSFET. It is capable of handling large currents and is suitable for high voltage applications. It has a low on-resistance and a low gate threshold voltage, and it also has various protection features including temperature measure, protection against overcurrent, and an ESD protection. These features make the FQB5N60TM a very useful product for many power switching applications.

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