FQB5N90TM Discrete Semiconductor Products

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FQB5N90TM is a type of transistor known as a Field Effect Transistor (FET). It is a N-Channel MOSFET, which is a type of transistor designed to provide high performance switching ability at low voltage and current levels. It is used in a wide variety of applications, ranging from analog signal processing to power management systems.

The FQB5N90TM is a single MOSFET, meaning that it is composed of a single conducting layer, usually made of silicon. This conducting layer is capable of carrying current through the device. The transistor operates by controlling the current flow through a gate terminal. The gate is used to control the current between the source and drain terminals. The source terminal supplies current, while the drain terminal accepts or blocks the current depending on the gate signal.

The key feature of FQB5N90TM is its low on-state resistance (RDSON). This is the amount of resistance present when the FET is in its "on" state. Low RDSON results in less power loss and improved efficiency. This is especially important for applications that require accurate power regulation, such as power management systems.

The working principle of the FQB5N90TM is relatively simple. When the gate voltage is equal to the source voltage, there is zero resistance between the source and drain and the FET is said to be in its "on" state. If the gate voltage is higher than the source, the FET is said to be in its "off" state, resulting in a higher resistance between the source and drain. The transistor is able to maintain two different states depending on the gate voltage, thus allowing it to switch between high and low-resistance states.

The FQB5N90TM is used in a wide variety of applications. It is used in power management systems and switching applications, such as switching relays and Solid State Power Controllers. It is also used in analog signal processing, such as audio amplifiers, audio preamps, and radio circuits. In addition, it is used for high-temperature applications, such as force-sensing resistors and temperature sensors.

The FQB5N90TM is a versatile and reliable transistor. It is able to provide high performance switching capabilities at low voltage and current levels, allowing it to be used in a variety of applications. Its low on-state resistance makes it especially useful for power regulation and other applications that require accurate power control. The transistor\'s ability to maintain two different states depending on the gate voltage makes it a suitable choice for switching applications.

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