Allicdata Part #: | FQB5P10TM-ND |
Manufacturer Part#: |
FQB5P10TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 4.5A D2PAK |
More Detail: | P-Channel 100V 4.5A (Tc) 3.75W (Ta), 40W (Tc) Surf... |
DataSheet: | FQB5P10TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FQB5P10TM is a field-effect transistor (FET) that is used in a variety of applications. It is an N-channel enhancement mode MOSFET. Field Effect Transistors are special semiconductor transistors which use voltage as a control of current instead of a base current like that of the bipolar junction transistor. This makes them ideal to use in high input impedance, low current applications.
FQB5P10TM operates by using a metal oxide barrier to block the flow of current. An insulated gate conductor is placed on a channel of the device, with a source terminal at one end and a drain terminal at the other. When a voltage is applied on the gate, a conductive channel is created between the source and drain terminals and current flows in an N-channel, from the source to the drain. This allows current to flow easily, making the FET suitable for amplifier applications.
The FQB5P10TM can be used in a variety of purposes. It is ideal for amplifier applications, as it allows for low current input and high input impedance for amplification of signals. It can be used in switching applications where the FET is used to turn power on and off, and has applications in motor control, power management and consumer products. This makes the FET a versatile and cost-effective choice.
The FQB5P10TM also has some advantages over other types of transistors. It has a low on-state resistance, which reduces the power loss caused by the voltage-drop across the transistor. This reduces the amount of power drawn from the power sources, and leads to more efficient operation. It has a high input-impedance, which makes it ideal for amplifier applications, as it can handle signals with low power levels. It is also relatively easy to work with, as it has a single control pin, which makes it simple to design circuits around it.
The FQB5P10TM has a working voltage of 10 V, a drain-source voltage of 5 V and a gate voltage of 5 V. It can handle currents of up to 10 A. Its maximum channel resistance is 5 ohms. It also has a breakdown voltage of 14 V, which is a measure of its tolerance to higher input voltages.
The FQB5P10TM is a versatile and cost-effective transistor that is widely used in a variety of applications. Its low on-state resistance and higher input-impedance makes it an ideal choice for amplifiers, switching applications and motor control. It is easy to work with, as it has a single control pin and has a range of operating voltages and currents.
The specific data is subject to PDF, and the above content is for reference
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