
Allicdata Part #: | FQB5N60CTM-WSTR-ND |
Manufacturer Part#: |
FQB5N60CTM-WS |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 4.5A |
More Detail: | N-Channel 600V 4.5A (Tc) 100W (Tc) Surface Mount D... |
DataSheet: | ![]() |
Quantity: | 1000 |
800 +: | $ 0.54770 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FQB5N60CTM-WS transistor is a part of Field Effect Transistor (FET) designed to swap between two analog or digital voltages or currents. It works as a switch with very low gate current by using a thin Silicon layer between two metallic layers or as a low capacitance diode or as an amplifier or a voltage controlled resistor. FQB5N60CTM-WS transistor is used in a variety of modern electronic applications.
A FETs is a relevant type of transistor for controlling large currents or applied voltages. It consists of a thin layer of insulating material (or oxide layer) between two electrical conducting plates. FETs are used in the majority of modern day semiconductor integrated circuits technologies to perform a variety of tasks where the signals must be switched quickly, or amplified with a low power consumption. FETs generally have can have both P and N type layers, allowing them to be used to perform both switching and linear applications.
A single transistor, such as FQB5N60CTM-WS, makes one of the simplest forms of transistor which can be constructed. The single transistor can be designed to switch between two or more voltages or currents, by using a built-in gate and source. By using the input gate voltage, the channel between the two electrodes is turned on or off. A single transistor, such as FQB5N60CTM-WS, can be used for a variety of tasks, including signal amplification, voltage buffering, and voltage switching.
The general operating principle of the FQB5N60CTM-WS, or any other single FET, is that the gate-source voltage controls the drain-source voltage. When a negative gate-source voltage is applied, the p-type region becomes depleted and the electron density decreases. The current flows between the drain and source and the drain-source voltage increases, turning the FET on. If the gate voltage is raised above the threshold voltage, the p-type region is no longer depleted and the electron density increases, turning the FET off.
The FQB5N60CTM-WS is used in a number of different applications, primarily in signal and analog circuits. It can be used as a switch or amplifier, acting as either an open or closed switch depending on the gate voltage or source voltage. It can be used to switch between two or more inputs, amplifying one input or controlling the levels of both. It can also be used as a voltage controlled resistor, allowing the resistance of a circuit to be changed with an applied voltage.
The FQB5N60CTM-WS transistor is an excellent choice for power applications, control applications, and for signal conditioning applications, due to its versatility, low gate current, and low capacitance. It is a powerful, low-cost solution for many of today’s electronic needs.
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