| Allicdata Part #: | FQB5N20LTM-ND |
| Manufacturer Part#: |
FQB5N20LTM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 4.5A D2PAK |
| More Detail: | N-Channel 200V 4.5A (Tc) 3.13W (Ta), 52W (Tc) Surf... |
| DataSheet: |  FQB5N20LTM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.13W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 25V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 5V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The FQB5N20LTM is a P-channel, low-voltage, UltraFET power MOSFET. It is a vertical transistor that is capable of providing both low on-resistance and superior switching performance. It is well suited for switching applications in power supplies, motor control, and other applications. In this article, we will discuss the application field and working principle of the FQB5N20LTM.
Application Field of FQB5N20LTM
The FQB5N20LTM is a power MOSFET that can be used for a wide range of applications. It is particularly well suited for switching applications in power supplies. As it is a low-voltage device, it can be used to drive a variety of loads at lower voltages. The device is also well suited for motor control and switched-mode power supplies (SMPS). Additionally, the FQB5N20LTM can be used in other applications where a low on-resistance and superior switching performance is required.
Working Principle of FQB5N20LTM
The FQB5N20LTM is a vertical, P-channel MOSFET. A MOSFET is a Field-Effect Transistor (FET), which is a type of three-terminal electronic device. Unlike a Bipolar Junction Transistor (BJT), the outgoing current in a MOSFET is controlled by the voltage applied to the gate terminal. The FQB5N20LTM is a low-voltage device, meaning it can switch loads with voltages lower than the drain-source voltage. This makes it suitable for applications that require very precise control of the outgoing current.
The FQB5N20LTM also has a low on-resistance, which is the resistance between the drain and source terminals. The low on-resistance increases the efficiency of the device, as less power is lost in the form of heat. Additionally, the FQB5N20LTM has a superior switching performance, making it ideal for switched-mode power supplies.
In summary, the FQB5N20LTM is a P-channel, low-voltage, UltraFET power MOSFET. It is well suited for switching applications in power supplies, motor control, and other applications requiring a low on-resistance and superior switching performance.
The specific data is subject to PDF, and the above content is for reference
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