FQB55N10TM

The FQB55N10TM is a semiconductor device usually referred to as a field effect transistor (FET). It is a type of MOSFET, meaning it is a metal-oxide-semiconductor field effect transistor. It is a single MOSFET, which means it has a single gate electrode (the gate electrode is the control electrode that supplies current to the channel). The FQB55N10TM has 10V breakdown voltage and a rated drain current of 55A, making it suitable for many power applications.

The FQB55N10TM has a number of applications, including power switching, power amplifying, and motor control. It is commonly used in inverter circuits, motor drivers, and power supplies, as well as in high power switching applications. It is also used in various automotive applications, such as fuel injectors, ABS systems, and traction control. In addition, the FQB55N10TM is also suitable for electromagnetic interference (EMI) protection, pulse generating circuits, and photovoltaic inverter circuits.

The FQB55N10TM works on the principle of a field-effect transistor. A FET consists of three terminals gate, drain and source. When a gate voltage (Vgs) is applied to the gate, it draws current through the channel between the source and drain, thus allowing it to switch between two states, namely the on-state and off-state. In the on-state, the device is conductive, allowing current to flow, while in the off-state it is non-conductive, blocking current from flowing through.

The FQB55N10TM is composed of various elements, including a source, gate, channel, drain and substrate. The source is the terminal from which the electrons flow into the channel, while the gate is the terminal where the gate voltage is applied. The channel is the area between the source and the drain, and it is where the current flow takes place. The drain is the terminal from which electrons leave the device, and the substrate is the material upon which the FQB55N10TM is constructed (often silicon).

When the gate voltage is applied to the FQB55N10TM, it creates an electric field or potential in the region between the source and the drain. The electric field affects the number of conducting electrons in the channel, and this determines the current flow through it. The current flow can be varied by changing the gate voltage. This is why the FQB55N10TM is useful for switching, amplifying, and motor control devices, as it allows for precise control of the current flow.

In summary, the FQB55N10TM is a type of MOSFET which is suitable for power applications such as switching, amplifying, and motor control. It works on the principle of a field effect transistor, whereby a gate voltage is applied to the gate, determining the current flow through the channel between the source and the drain. It is composed of various elements including a source, gate, channel, drain, and substrate. With its high power ratings and precise control, it is well suited for use in power electronics, automotive applications, and other high-power applications.

FQB5N50CFTM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 500V 5A D2PAK...
FQB5N60CTM-WS	ON Semicondu...	0.6 $	1000	MOSFET N-CH 600V 4.5AN-Ch...
FQB5N90TM	ON Semicondu...	--	800	MOSFET N-CH 900V 5.4A D2P...
FQB5N50CTM	ON Semicondu...	--	1600	MOSFET N-CH 500V 5A A.D2P...
FQB5N80TM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 800V 4.8A D2P...
FQB50N06TM	ON Semicondu...	--	1000	MOSFET N-CH 60V 50A D2PAK...
FQB5N60CTM	ON Semicondu...	--	1000	MOSFET N-CH 600V 4.5A D2P...
FQB5N30TM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 300V 5.4A D2P...
FQB5N40TM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 400V 4.5A D2P...
FQB55N06TM	ON Semicondu...	--	1000	MOSFET N-CH 60V 55A D2PAK...
FQB50N06LTM	ON Semicondu...	--	1000	MOSFET N-CH 60V 52.4A D2P...
FQB5P10TM	ON Semicondu...	--	1000	MOSFET P-CH 100V 4.5A D2P...
FQB55N10TM	ON Semicondu...	--	4000	MOSFET N-CH 100V 55A D2PA...
FQB5N60TM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 600V 5A D2PAK...
FQB5N20LTM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 200V 4.5A D2P...
FQB5N20TM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 200V 4.5A D2P...
FQB5N15TM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 150V 5.4A D2P...
FQB5P20TM	ON Semicondu...	--	1000	MOSFET P-CH 200V 4.8A D2P...
FQB5N50TM	ON Semicondu...	0.0 $	1000	MOSFET N-CH 500V 4.5A D2P...