| Allicdata Part #: | FQB5N80TM-ND |
| Manufacturer Part#: |
FQB5N80TM |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 800V 4.8A D2PAK |
| More Detail: | N-Channel 800V 4.8A (Tc) 3.13W (Ta), 140W (Tc) Sur... |
| DataSheet: |  FQB5N80TM Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.13W (Ta), 140W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 2.6 Ohm @ 2.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.8A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The FQB5N80TM features an advanced power MOSFET technology with excellent performance and low on-resistance. This device is ideal for reliable, high-performance power switching applications. It features an integrated anti-parallel body diode and offers an improved level of saturation current. It is commonly used in DC/DC converters, automotive power management and mobile power applications, as well as general-purpose power applications, such as motor control, switched mode power supplies, and home appliances. In this article, we will discuss the application field and working principle of the FQB5N80TM.
Application Field of FQB5N80TM
The FQB5N80TM is specifically designed for applications that require high current handling with low on-resistance. It is commonly used in DC/DC converters, automotive power management and mobile power applications, as well as general-purpose power applications. The device is suitable for motor control, switched mode power supplies, and home appliances. It is also well suited for high-efficiency power conversion systems.In addition, the device features an anti-parallel body diode that provides protection against overvoltage transients. This diode can reduce voltage spikes by clamping them to safe levels, providing improved system reliability.Working Principle of FQB5N80TM
The FQB5N80TM is a MOSFET (metal-oxide-semiconductor field-effect transistor). It consists of a source, gate and drain, which are all insulated from each other by a thin insulating layer of silicon dioxide (SiO2). The source is connected to the source voltage, the gate is connected to the gate voltage, and the drain is connected to the load.The working principle of the FQB5N80TM relies on four main factors: the gate voltage (VG), the drain voltage (VD), the channel current (ID) and the on-resistance (RDSon). When the gate voltage is increased, the channel current increases, making the device conductive. As the channel current increases, the on-resistance decreases. This makes the device more efficient, as less power is lost in the form of heat.In addition, the FQB5N80TM has an integrated body diode that provides protection against overvoltage transients. This diode can limit voltage spikes to safe levels, providing improved system reliability.Conclusion
The FQB5N80TM is an ideal device for reliable and high-performance power switching applications. It is commonly used for DC/DC converters, automotive power management, mobile power applications, motor control, switched mode power supplies and home appliances. The device features an integrated anti-parallel body diode, providing improved system reliability. The device also has low on-resistance, which makes it more efficient and helps reduce power loss.The specific data is subject to PDF, and the above content is for reference
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