FQB5N60CTM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQB5N60CTM is a sophisticated, state-of-the-art power metal-oxide-semiconductor field-effect transistor (MOSFET) device. As a single-package component, it integrates a variety of technologies in the single component package including the requisite power devices and design flexibility.

This MOSFET is designed for use in several specific applications such as power switching, battery-powered applications, voltage regulators, and digital and analogue circuit designs. It is rated for a maximum drain-source voltage of 600V, a maximum channel temperature of 175°C, and a maximum drain current of 30A. It is also designed to have a maximum power dissipation of 315 Watts, a junction to ambient thermal resistance of 0.8°C/W, and a maximum gate-source voltage of ±20V.

MOSFETs are semiconductor devices that operate by modulating an electric field to control the behavior of current. The FQB5N60CTM is an enhancement-type MOSFET and is able to offer improved switching and power efficiency in most power conversion applications. As with all MOSFETs, the FQB5N60CTM has three terminals – the drain, the gate, and the source – and it is configured so that when a small charge is applied to its gate terminal, a larger electric current can flow through its source and drain terminals. Essentially, a MOSFET behaves as a current source and thus provides a higher level of efficiency compared to other types of inverters or power converters.

In order to understand the specific operation of the FQB5N60CTM, it is important to understand the device\'s underlying design principles. The MOSFET device is based on an architecture in which a N-channel MOSFET is connected in series with a P-channel MOSFET. The N-channel MOSFET is responsible for allowing current to flow from the drain terminal to the source terminal, while the P-channel MOSFET is responsible for blocking the current flow in the other direction.

In order to allow the current to flow through both MOSFETs, a charge is applied to the gate terminals of both MOSFETs. This charge is generated by a low-impedance side gate driver circuit and is referred to as the Gate Voltage – which is typically a voltage of 12V, but could be higher depending on the particular application in use. In order to block the current flow, the N-channel MOSFET needs to have a negative voltage applied to its gate terminal, while the P-channel MOSFET needs to have a positive voltage applied to its gate terminal. The strength of the applied voltages then determines the degree to which the MOSFETs are able to control the current flow.

Moreover, the FQB5N60CTM MOSFET also has a variety of protective features that are used to ensure safe operation. These include the circuit protection diodes, the power loop diode, and the double-pole low side driver. Furthermore, the FQB5N60CTM MOSFET also has a power transistor that has been designed to reduce “snapback”, which is a phenomenon in which an inrush of current causes an increase in voltage that then causes the device to be destroyed.

In conclusion, the FQB5N60CTM MOSFET is an advanced, single-package power MOSFET device that is designed for use in various applications including power switching, voltage regulator, and digital analog circuit designs. It features an integrated architecture that combines both N-channel and P-channel MOSFETs with a low-impedance side gate driver circuit. The device also contains a variety of protective features as well as a power transistor that has been designed to reduce snapback. It is rated for a maximum drain-source voltage of 600V, a maximum drain current of 30A, and a maximum power dissipation of 315 Watts.

The specific data is subject to PDF, and the above content is for reference