FQB5N50TM

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FQB5N50TM is a single, fifth generation TuFET power MOSFETs that provides superior performance in power conversion applications. The device combines a fifth generation TuFET structure with an optimized dielectric isolation structure that enables high power density, efficiency, and cost effectiveness. This high level of performance makes FQB5N50TM the ideal choice for many power conversion applications such as high frequency power supply designs, power factor correction, and motor control designs.

The FQB5N50TM\'s low on-resistance and low gate charge allow for greater power efficiency in applications with high input current profiles. The device also employs a low Vf with a steep slope, allowing for faster switching speeds, higher switching frequencies, and improved efficiency. Additionally, the tight tolerance on dynamic Rds(on) provides for maximum efficiency of the power conversion application.

The FQB5N50TM works on the principle of a metal-oxide field-effect transistors (MOSFET). It is a voltage-controlled device, which means the device can be switched between the on and off state by applying an electric field at two output pins, the gate and the drain. By controlling the electric field, the transistor can be used to regulate an AC or DC current. When the electric field is applied, the “gate” will be attracted to the “drain” and a conduction channel is produced, allowing electric current to flow between the two elements. When the electric field is removed, the conduction channel is blocked and the current flow is stopped.

The FQB5N50TM is designed for low-temperature operation and is also highly integrated, making it a cost effective and power efficient solution for power conversion applications. The device features a thin-oxide breakdown voltage of 5.5V and a low gate charge of 63nC. The device is rated for current up to 50A and the low gate charge prevents the need for bulky gate drivers.

The FQB5N50TM is an ideal choice for power supplies, motor controllers, AC-DC and DC-DC converters, and switching regulators. The device can operate in temperatures ranging from -55˚C to 150˚C and is available in a TO-220 and WI-11 packages. As such, the FQB5N50TM is an excellent choice for harsh temperature environments and high thermal demand applications.

The FQB5N50TM is designed to provide high efficiency, and low switching losses at higher frequencies. The device also features low output capacitance, which reduces the output voltage ringing for optimum switch control. Moreover, the device features low body diode forward voltage and reverse-recovery time for improved EMI compliance.

The FQB5N50TM offers low on-resistance and high saturation current, resulting in maximum efficiency and high power density. Additionally, the device has low gate charge and turn-on voltage levels, offering improved switching performance and efficiency over other devices.

Overall, the FQB5N50TM is an advanced power MOSFET with an optimized dielectric isolation structure that enables great power density and cost effectiveness. The device is suitable for power supplies, motor controllers, AC-DC and DC-DC converters, and switching regulators and features excellent switching speed, performance, and efficiency.

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