FQB5P20TM

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Introduction

The FQB5P20TM MOSFET is a high current single-channel or dual N-channel MOSFET. It is a high-voltage device with an integrated Schottky diode, which can withstand a maximum drain-source voltage of 200V. The FQB5P20TM incorporates a separate gate terminal, allowing it to be used as a closed-off or depletion mode switch. The FQB5P20TM has a maximum on-resistance of 62 milliohms (mOhms) and can provide a maximum continuous drain current of 580mA.

Application Field

The FQB5P20TM is suitable for a wide range of applications, including high power switching, high voltage switching, voltage regulation, LED lighting, and motor control. In addition, this MOSFET can also be used in various non-critical applications due to its low cost. It can be used in circuits where a moderate amount of current needs to be switched, with a maximum continuous drain current of 580mA. The FQB5P20TM also provides excellent EMC and noise immunity, making it suitable for use in applications with high levels of noise.

Working Principles

The FQB5P20TM enables switching operations by altering the voltage across the gate and drain terminals. When the voltage on the gate terminal exceeds the threshold voltage of the device, the MOSFET is in the ON state. This means that the drain terminal is “open”, allowing current to flow. When the voltage on the gate terminal falls below the threshold voltage, the MOSFET is in the OFF state. The device is then “closed” and no current can flow from the drain terminal. The device can also be operated in either the unipolar mode or the bipolar mode, where the drain terminal is switched by both positive and negative voltages, respectively. The device can also be operated in the enhancement mode, where the gate voltage must be higher than the threshold voltage for the device to turn on, or in the depletion mode, where the gate voltage must be lower than the threshold voltage for the device to turn off.

The FQB5P20TM also incorporates a special Schottky diode to protect the device from transient voltages or current surges. This diode is located between the drain and source terminals, and provides a short circuit while the MOSFET is off. The Schottky diode reduces power dissipation and has a lower forward voltage than a conventional diode. This feature ensures that the FQB5P20TM is suitable for use in high power applications.

Advantages

The FQB5P20TM has several advantages compared to other MOSFETs, including a low on-resistance of 62 mOhms, a high continuous drain current of 580mA, and an integrated Schottky diode. The device also has excellent EMC and noise immunity, allowing it to be used in applications with high levels of electrical noise. In addition, the FQB5P20TM also provides a range of operating modes, allowing it to be used for a variety of applications.

Conclusion

The FQB5P20TM is a high-voltage MOSFET with an integrated Schottky diode. It has a low on-resistance of 62 mOhms and a high continuous drain current of 580mA. The device also has excellent EMC and noise immunity, as well as a wide range of operating modes. The FQB5P20TM is suitable for a variety of applications, such as high power switching, high voltage switching, voltage regulation, LED lighting, and motor control.

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