FQB5N30TM

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The FQB5N30TM is a N-channel vertical d-mode power Trench MOSFET (Metal oxide semiconductor field effect transistors). It is designed with a very low on-state resistance and very low gate charge. It also provides excellent switching performance due to its fast switching speed and low gate threshold voltage.

The FQB5N30TM has the following features:

• On-state resistance: 4mOhm and 5mOhm
• Maximum Drain-Source Voltage: 30V
• Gate Threshold Voltage: 1.5V
• Maximum Drain Current: 25A
• Maximum Power Dissipation: 65W
• Operating Temperature: -55 up to 150 °C

The FQB5N30TM is a type of insulated-gate field effect transistor that is used for power switching and amplification. It has a wide range of application in power electronic systems, such as AC/DC converters, DC/DC converters, inverters, motor drives, power supplies, switching and amplifying circuits,and so on.

When using an FQB5N30TM, there are two important components: the gate and the drain. The gate voltage controls the flow of current through the transistor, while the drain current is what controls the power output. The drain current is proportional to the gate-source voltage and the positive drain-source voltage.

The working principle of FQB5N30TM can be explained in the following three steps:

1. Apply a positive voltage to the gate of the FQB5N30TM. This will attract the interface electrons away from the gate and towards the drain, effectively allowing current to flow.
2. The current then passes through the channel where the gate voltage is applied.
3. The current then moves to the drain, which is at a lower voltage than the gate, allowing the transistor to turn on and off without having to varying the current.

The operation of the FQB5N30TM is very similar to other insulated gate field effect transistors. It has the same basic structure with source, gate, and drain. The main difference is that it uses the D-mode Trench MOSFET technology, which allows for faster switching and lower on-state resistance. This makes it ideal for high power applications, such as motor drives and power supplies.

In summary, the FQB5N30TM is a type of insulated-gate field effect transistor that is used for power switching and amplification. It has a wide range of application in power electronic systems, such as AC/DC converters, DC/DC converters, inverters, motor drives, power supplies, and more. It works by applying a positive voltage to the gate of the device which will attract electrons and create a conductive channel between the source and drain. It is well suited for high power applications due to its fast switching speed and low on-state resistance.

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