Allicdata Part #: | FQU10N20CTU-ND |
Manufacturer Part#: |
FQU10N20CTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 7.8A IPAK |
More Detail: | N-Channel 200V 7.8A (Tc) 50W (Tc) Through Hole I-P... |
DataSheet: | FQU10N20CTU Datasheet/PDF |
Quantity: | 4040 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FQU10N20CTU is one of the most widely used type of insulated gate field-effect transistor (IGFET), also known as a metal oxide semiconductor field-effect transistor (MOSFET). It is used in many applications including digital logic, power switches, and other applications that require high power control and switching capabilities. This type of IGFET is widely used in the electronics industry for its low-cost and high efficiency properties.
This type of transistor works by changing the electric field between the gate and the source-drain field, which then modulates the current. This type of transistor is ideal for high speed switching applications due to its low cost and high efficiencies, as well as its high power capability.
FQU10N20CTU are easily controlled by altering the amount of electrical charge present between the source and the gate of the FET. This is because the current flowing through the FET is determined by the gate voltage, which can be easily adjusted by applying a voltage to the gate terminal. The FET can also be easily turned on and off by altering the gate voltage, which makes it ideal for digital applications.
Examples of digital applications are high speed switches and integrated circuits, as well as multi-stage procedures and number shaped circuits like checkers, chess boards, binary trees and logic gates. This type of transistor is also widely used in the power supply industry due to its high power switching abilities, which are greatly useful in switching power between different parts of the circuit. Furthermore, it has great applications in the automotive industry, as it can be used to control the flow of power between various systems in the car.
Additionally, FQU10N20CTU are also ideal for radio frequency (RF) applications due to its high switching speeds, low capacitance and low gate capacitance. They are used in various RF components such as amplifiers, oscillators and mixers. This type of transistor has also been widely applied in controlling the electrical resistance of thin film materials, which are used in chip packaging.
In conclusion, FQU10N20CTU is a type of insulated gate field-effect transistor (IGFET) that is widely used in many applications where high power control and switching capabilities are needed. It is ideal for digital logic, power switches, and other applications that require high speed switching and high power control. Furthermore, it is also widely used in the automotive and power supply industries and has great potential in RF applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQU10N20TU_AM002 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 7.6A IPA... |
FQU1N50TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 1.1A IPA... |
FQU13N06TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 10A IPAKN... |
FQU13N10TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 10A IPAK... |
FQU1N60TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 1A IPAKN... |
FQU10N20LTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 7.6A IPA... |
FQU10N20TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 7.6A IPA... |
FQU13N06LTU-WS | ON Semicondu... | 0.78 $ | 18330 | MOSFET N-CH 60V 11A IPAKN... |
FQU12N20TU | ON Semicondu... | -- | 5709 | MOSFET N-CH 200V 9A IPAKN... |
FQU1N60CTU | ON Semicondu... | -- | 2223 | MOSFET N-CH 600V 1A IPAKN... |
FQU10N20CTU | ON Semicondu... | -- | 4040 | MOSFET N-CH 200V 7.8A IPA... |
FQU1N80TU | ON Semicondu... | -- | 1818 | MOSFET N-CH 800V 1A IPAKN... |
FQU17P06TU | ON Semicondu... | -- | 5103 | MOSFET P-CH 60V 12A IPAKP... |
FQU13N06LTU | ON Semicondu... | -- | 261 | MOSFET N-CH 60V 11A IPAKN... |
FQU13N10LTU | ON Semicondu... | -- | 6189 | MOSFET N-CH 100V 10A IPAK... |
FQU11P06TU | ON Semicondu... | -- | 2839 | MOSFET P-CH 60V 9.4A IPAK... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...