FQU12N20TU Allicdata Electronics
Allicdata Part #:

FQU12N20TU-ND

Manufacturer Part#:

FQU12N20TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 9A IPAK
More Detail: N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Through...
DataSheet: FQU12N20TU datasheetFQU12N20TU Datasheet/PDF
Quantity: 5709
Stock 5709Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQU12N20TU device is one of the many Field Effect Transistors (FETs) available in the market today. FETs are a type of transistor that use a narrow electrostatic field to control the flow of the electric current through the device. They are used in many electronics applications to allow for precise control of the current flow in a circuit. In particular, the FQU12N20TU is part of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) family, which is used in many electronic circuits. It is a power switching device, meaning it can be used in applications where the circuit must be able to switch between two different operating states.

The main feature of the FQU12N20TU is its ultra-low on-state resistance. This feature makes it possible to achieve high power savings when using the device as a power switch. It also has an exceptionally low gate capacitance, which means it can be used in applications such as power supply design and power factor correction that require switching at high frequencies. Another important feature is its very low package thermal resistance, allowing for efficient heat transfer from the device to the PCB.

As a power switch, the FQU12N20TU can be used in many different applications. One example is in switching power supplies, where the FET can be used to switch the power supply output between different operating states, such as AC/DC or low/high voltage levels. The FET can also be used to switch the current in circuits such as DC to DC converters, where the FET can be used to switch between the input and output voltage levels. This allows for efficient and precise power management in these applications.

The FQU12N20TU is also used in many communications applications, as it can be used to switch signals between different operating states. For example, it can be used to switch signals in antennas or amplifiers, allowing for more efficient signal delivery. It is also used in many amplifiers and audio processing circuits, where the FET can be used to switch between different sounds or frequencies, allowing for finer adjustments and greater sound quality.

The FQU12N20TU is also used in automotive applications such as motor controllers, where its high switching speed and low on-state resistance allow for more efficient control of the motor. It can also be used in applications such as LED lighting or LED dimmers, where its low power consumption enables longer battery life when used in these applications. Finally, the FQU12N20TU can also be used in solar panel controllers, where its low on-state resistance allows for more efficient conversion of solar energy.

In summary, the FQU12N20TU is a low-cost, high-performing transistor that has many uses in electronics applications. Its low power consumption, high power switching speed and low on-state resistance make it a very attractive option for power management, communications and automotive applications. Furthermore, its low package thermal resistance allows for efficient heat transfer from the device to the PCB, allowing for maximum efficiency.

The specific data is subject to PDF, and the above content is for reference

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