FQU13N06LTU-WS

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 28W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	350pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6.4nC @ 5V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	115 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The FQU13N06LTU-WS is an N-Channel Enhancement Mode MOSFET manufactured by Fairchild Semiconductor. It is designed to provide low on-state resistance, high switching speeds and improved ruggedness. It also features an integrated electrostatic discharge (ESD) protection. The FQU13N06LTU-WS application field and working principle will be discussed in this article.

FQU13N06LTU-WS Application Field

The FQU13N06LTU-WS is a dual MOSFET with low on-resistance, fast switching speed and improved ruggedness. As such, it is used in a variety of applications, including power management solutions and power conversion solutions. It is also used in DC-to-DC converters, point-of-load converters, and load switches. Moreover, it is used in power amplifier designs, low-noise amplifiers and audio power amplifiers.The FQU13N06LTU-WS MOSFET is flexibility and can be used as a simple switch in many applications, allowing for a wide range of new possibilities. It can help to reduce system size and cost since it can be used as a single low RDS solution for multiple devices.

FQU13N06LTU-WS Working Principle

The FQU13N06LTU-WS is an N-Channel Enhancement Mode MOSFET. This means that it has a drain-source path that contains an additional oxide oxide layer. This layer is what gives the FQU13N06LTU-WS its low on-state resistance, high switching speeds and improved ruggedness.When the gate voltage is greater than the source voltage, the FQU13N06LTU-WS is turned on, allowing current to flow through the drain-source path. This is because the channel is opened and the FQU13N06LTU-WS can act as an amplifier or switch. When the gate voltage is less than the source voltage, however, the FQU13N06LTU-WS is turned off, preventing any current from flowing through the drain-source path.The FQU13N06LTU-WS also features an integrated electrostatic discharge (ESD) protection which helps to minimize static faults and minimize the possibility of device failure due to static discharge.

Conclusion

The FQU13N06LTU-WS is an N-Channel Enhancement Mode MOSFET manufactured by Fairchild Semiconductor. It is designed to provide low on-state resistance, high switching speeds and improved ruggedness. It is used in many applications, including power management solutions and power conversion solutions. Furthermore, it features an integrated electrostatic discharge (ESD) protection. The FQU13N06LTU-WS works by using an additional gate oxidelayer and with the help of positive gate voltage, the FQU13N06LTU-WS will be turned on, allowing current to flow through the drain-source path. The FQU13N06LTU-WS is a versatile and flexible tool due to its low RDS solution for multiple devices.

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