FQU10N20TU

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 51W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	670pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	360 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.6A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQU10N20TU is an enhancement-mode field-effect transistor (MOSFET) designed using the latest advanced process technology. It is a low-cost and low-noise device ideal for high current switching, power conversion, and high-voltage power MOSFET applications. The FQU10N20TU is available in various packages and is suitable for general-purpose applications as well as specific applications such as motor control, inverters, power supplies and more.In order to explain the context of the FQU10N20TU, it is essential to understand the basic principles of MOSFET technology. MOSFET is an acronym for Metal Oxide Semiconductor Field Effect Transistor. It is the most commonly used type of transistor in modern electronics and is very versatile in its applications. It is basically a four-layer device which consists of three terminals; the source, gate, and drain. Among these terminals, the voltage signal applied between the gate and the source determines the current flowing between the drain and the source. The FQU10N20TU operates in an enhancement-mode, meaning that a signal must be applied to the gate in order to enable the flow of the current. Ultimately, the control factor of the MOSFET is, therefore, the gate-source voltage applied. Unlike its counterpart, the depletion-mode MOSFET, which requires a voltage signal to deactivate its current flow, the enhancement-mode MOSFET needs voltage signal to activate the current flow. The FQU10N20TU, operating as an enhancement-mode device, is able to deliver high-currents and is suitable for numerous applications requiring high performance.The FQU10N20TU is ideally suitable applications requiring low-noise operation, low-cost, and low-current performance. The device offers direct control of the current flow with a single voltage input, making it an ideal choice for motor control, inverters, and power supplies. Additionally, the device offers a low power dissipation, high current gain, and low turn-on and turn off delays, making it suitable for a wide range of applications. Additionally, the device is designed to withstand high voltages, allowing it to be used in a variety of high-voltage power-MOSFET applications.The FQU10N20TU has a wide range of packages available, from small outline packages (SOPs) to large-sized IC packages. This allows the device to be used for general-purpose applications, as well as for more specific applications which may require a specific package size or elements. In conclusion, the FQU10N20TU is an ideal MOSFET for many applications due to its low-cost and low-noise operation. It is suitable for motor control, inverters, power conversion, and other high-voltage power MOSFET applications. The benefit of the FQU10N20TU is that it allows direct control of the current flow, thanks to its single voltage input and its availability in various package sizes.

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