| Allicdata Part #: | FQU10N20LTU-ND |
| Manufacturer Part#: |
FQU10N20LTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 7.6A IPAK |
| More Detail: | N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Throu... |
| DataSheet: |  FQU10N20LTU Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 51W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.6A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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FQU10N20LTU is a field effect transistor (FET) with a single transistor structure. It is also sometimes referred to as an enhanced version of a MOSFET. A FET has a channel of semiconductor material that gates the flow of electrical current, meaning it can amplify or attenuate the signal which passes through it.
The FQU10N20LTU is a high current transistor with a maximum current rating of 10A and 200W power dissipation. It has a very low on-state resistance of 0.015Ohms, making it ideal for power applications, where a low on-state resistance is desirable.
The source and drain connections of a FQU10N20LTU are where the current enters and exits the component. The gate is the terminal which controls the source-drain current flow. By applying a voltage to the gate terminal, the FET can be further amplified.
The working principle of a FQU10N20LTU FET involves controlling the current flow with the applied gate voltage. The device has a specific threshold voltage (Vth) which is the voltage at which the FET begins to conduct current. As the gate voltage rises, the current starts to increase, and the higher the gate voltage, the higher the current. When the voltage is reduced below the threshold level, the current stops flowing.
The FQU10N20LTU is mainly used in power applications such as lighting ballasts, motor control, and power switching. The device has a wide range of applications due to its low resistance and high power ratings, and is the ideal choice for applications where a lower on-state resistance is necessary.
In conclusion, the FQU10N20LTU is an effective field effect transistor with a single transistor structure. The device offers excellent performance characteristics and is ideal for power applications, as it has a low resistance and can handle high power dissipations. The device works by controlling the current flow with a gate voltage and is mainly used for lighting ballasts, motor control and power switching.
The specific data is subject to PDF, and the above content is for reference
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