FQU1N50TU

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	5.5nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	9 Ohm @ 550mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1.1A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQU1N50TU is a field-effect transistor, commonly referred to as a FET, and more specifically, a metal-oxide semiconductor field-effect transistor (MOSFET). It belongs to a family of FETs known as “single”, which possess only a single gate. This type of FET is used in a wide range of applications, including switching, power control, audio amplification, and voltage regulation.The FQU1N50TU’s working principle is based on the operation of charge carriers through a so-called “channel”. More specifically, an electric field is created across the channel when a voltage is applied between the source and drain terminals. This field causes changes in the shape of the channel and subsequently induces the flow of electrons (or holes, in a depletion-type MOSFET) from source to the drain.The amount of channel current generated by the field is controlled by the voltage that is applied to the gate terminal. This voltage-controlled current flow is the basis of the FETs operation. By applying either a positive or negative voltage to the gate terminal, the current flow between the source and drain terminals can be altered and this ability can be used to control or switch other circuit components and their functionalities.The FQU1N50TU is a N-channel FET, which means it is constructed with a layer of metal oxide on the surface of a silicon substrate. A positive voltage applied to the channel will cause electrons to flow from the source to the drain. This kind of FET is commonly used in switching circuits, motor drivers, and power supplies. The metal oxide surface layer is also referred to as the “gate dielectric”, and the strong electrostatic field created by the positive voltage applied to the gate can cause electrons to be attracted from the source to the drain. By controlling the gate voltage, the amount of current flowing through the device can be controlled, allowing for current flow to be switched on and off by controlling the gate voltage.The FQU1N50TU is an ideal choice for applications that require high-temperature operation and a wide range of current control. Additionally, these transistors have low input capacitance and low-power dissipation, enabling them to be used in energy saving applications. The FQU1N50TU provides reliable switching performance over a wide range of temperature extremes and can operate at high currents. This has made it the ideal transistor for applications such as power supplies, motor controllers, and switching circuits.The FQU1N50TU is also notable for its high-frequency performance, making it suitable for use in a range of audio-amplification and voltage regulation applications. The device is designed to reduce the amount of external components needed for operation, allowing for a simpler circuit design. The FQU1N50TU is an efficient and reliable FET for a wide range of applications and its flexibility and cost-effectiveness make it an ideal choice for use in consumer electronics, automotive, and embedded systems. Its low-power consumption and low-power dissipation provide the device with exceptional performance and longer life expectancy than other devices of the same type. The FQU1N50TU offers reliable performance and is highly capable of delivering reliable switching operations in a variety of conditions and across a wide range of temperature extremes. It is also suitable for use in various audio-amplification, voltage regulation, and power-switching circuits.In conclusion, the FQU1N50TU is a highly capable and reliable field-effect transistor. It is suitable for a wide range of applications, including switching, power control, audio amplification, and voltage regulation. The device is capable of providing reliable performance and is suitable for use in high temperature and energy saving applications, making it an ideal choice for consumer electronics, automotive, and embedded systems.

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