FQU13N06TU Allicdata Electronics
Allicdata Part #:

FQU13N06TU-ND

Manufacturer Part#:

FQU13N06TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 10A IPAK
More Detail: N-Channel 60V 10A (Tc) 2.5W (Ta), 28W (Tc) Through...
DataSheet: FQU13N06TU datasheetFQU13N06TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQU13N06TU is a field-effect transistor (FET) specifically designed for advanced high frequency circuit applications. As a class of devices, FETs are distinguished by their ability to modulate conductivity based on the applied potential of the gate. The FQU13N06TU is a specific type of FET called a metal oxide semiconductor field effect transistor (MOSFET) and belongs to the single junction category.

MOSFETs are enhanced versions of FETs, as the oxide layer separating the gate from the conducting channel provides even better control of current flow. In FETs, the gate width is adjustable; however, it is fixed for MOSFETs. As relatively new devices, MOSFETs offer the advantage of low gate capacitance and high drive currents.

The FQU13N06TU consists of a source, drain and gate. The source and drain are the two terminals through which current passes while the gate acts as a controller. Applying a negative voltage to the gate causes the channel between the source and drain to turn off, thereby preventing any current flow. Conversely, applying a positive voltage to the gate causes the channel to open up, allowing current to pass through the device. This type of transistor is known as an enhancement mode transistor.

The main purpose of the FQU13N06TU is to act as a device switch in high frequency applications. The main advantage of using this device in this type of application is its exceptional high speed switching capability. The device also offers very low drain-source capacitance and a low on-state resistance. These properties make the FQU13N06TU well suited for applications such as RF switching, receivers, cellular base stations, and other high frequency circuits.

In summary, the FQU13N06TU is a single junction MOSFET offering enhanced control of the current flow compared to standard FETs. It is specifically designed for high frequency applications and excels in RF switching due to its low resistance, low capacitance, and high switching speed. This device is ideal for use in cellular base stations, receivers, and other high frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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