| Allicdata Part #: | FQU13N06LTU-ND |
| Manufacturer Part#: |
FQU13N06LTU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 11A IPAK |
| More Detail: | N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Through... |
| DataSheet: |  FQU13N06LTU Datasheet/PDF |
| Quantity: | 261 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 5V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 115 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The FQU13N06LTU is a logic level N-channel MOSFET (metal oxide semiconductor field effect transistor) designed for high speed switching applications. It is suitable for switch mode power supplies, DC-DC converters and other applications requiring high speed switching and low on-resistance.
MOSFETs are a type of transistor that utilizes a gate in order to control the opening and closing of a conducting channel between two terminals, the source and the drain. In this way, a voltage applied to the gate of the FQU13N06LTU can control the current flowing between the source and drain terminals.
The FQU13N06LTU has an impressive maximum-available on-state resistance of 0.006 ohms and a maximum drain current of 32A. These impressive characteristics make the device ideal for use in applications that require high current switching and low on-state resistance. Additionally, its high-performance can also be attributed to its low gate-to-drain charge of 7 nC.
The FQU13N06LTU also has a wide gate threshold voltage range with a minimum gate threshold voltage of -2.2V and a maximum gate threshold voltage of -4.5V. This gives it a wide range of applications, from switching on powerelectronics to linear voltage regulators. Additionally, its fast switching speed of 18ns and low input capacitance of 8pF make it one of the fastest switching MOSFETs available.
The FQU13N06LTU is also characterized by its breakdown voltage rating of 400V and its drain-to-source voltage rating of -40V/40V. This makes it suitable for use in a variety of applications, from small-signal switching circuits to high power switching applications.
The FQU13N06LTU is a highly versatile device that can be used in a variety of applications. Its high-speed switching, low on-state resistance and wide range of available gate threshold voltages make it a great choice for use in power electronics, motor control, and many other applications. With its impressive performance and versatility, the FQU13N06LTU is an excellent choice for any application that requires high speed switching and low on-state resistance.
The specific data is subject to PDF, and the above content is for reference
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