FQU1N80TU

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	195pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	7.2nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	20 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	1A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The FQU1N80TU is a type of field effect transistor (FET). It is a single FET, also known as an "enhancement-mode transistor", and is classified under the Transistors - FETs, MOSFETs - Single category. FETs allow for current to flow between its source and drain pins when the control gate is biased at a positive voltage. The FQU1N80TU is a high-performance transistor specifically designed for high speed switching and low power consumption. It is a high-gain MOSFET transistor, which ensures low on-resistance. This makes it an ideal choice for high power applications that require high speed switching and high efficiency. The FQU1N80TU is suitable for a wide range of applications where minimal power consumption and low power dissipation are desired. It is typically used in high-frequency electronic circuits, such as in switching power supplies, amplifiers and other circuits with large signal density. The FQU1N80TU is a two terminal device that has a Gate, Source, and Drain. The Gate is utilized to turn the device on or off by allowing or blocking current flow. The Source pin is used to supply the electrons to the electron channels and the Drain is used to remove the electrons. The FQU1N80TU can be biased in either enhancement mode or depletion mode. This can be controlled by the voltage applied to the gate. In enhancement mode, the device is turned "on" when the gate voltage is increased above the threshold voltage. In depletion mode, the device is turned "off" when the gate voltage is decreased below the threshold voltage. The FQU1N80TU can operate in both linear and saturation modes. In linear mode, the output voltage is directly proportional to the input voltage. In saturation mode, the output voltage increases incrementally as the input voltage increases. This Transistor can also be used for cascading and for the Darlington configuration.The FQU1N80TU has a maximum drain-source voltage of 80 volts, and is capable of handling currents of up to 3A at a temperature of 25°C. The maximum power dissipation of the transistor is 50 watts, which is an impressive figure. The transistor also has a very low on-resistance, which provides high speed and low power dissipation. The FQU1N80TU is also designed to work with minimal reverse leakage, which prevents circuit instability over extended periods of time. In conclusion, the FQU1N80TU is a single FET transistor that is specifically designed for high speed switching and low power consumption. The FET enables the current to flow between its source and drain pins when the control gate is biased at a positive voltage. It is suitable for a wide range of applications, and features low on-resistance, high power dissipation, and minimal reverse leakage.

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