FQU10N20TU_AM002

Series:	QFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	360 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	670pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2.5W (Ta), 51W (Tc)
Operating Temperature:	--
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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The FQU10N20TU_AM002 is a silicon-based transistor, a type of field-effect transistor (FET) constructed of a channel of N-type material surrounded by two P-type junctions in a very basic single-device format. This type of transistor is popularly used in many applications due to its simple structure, low cost and excellent switching performance.The FQU10N20TU_AM002 is particularly well suited for high-frequency switching applications. It offers very low forward and reverse blocking voltage, enabling the transistor to respond effectively to very fast digital signals. This means that the FQU10N20TU_AM002 can be used for switching in the range of up to 1GHz, with very little distortion or signal loss.In terms of its working principle, the FQU10N20TU_AM002 operates in a manner similar to that of other FETs. When the base-gate voltage exceeds the threshold voltage, a current flow is induced through the gate-drain connection. This current flow is then modulated by variations in the gate-source voltage, allowing changeable current flow depending on the source-drain voltage. As its technique of conduction relies solely on the electric field effect, it is considered superior to BJT transistors, which rely on thermal and current effects to switch. As such, when using a FQU10N20TU_AM002 in a high frequency, precision-required application, a more advanced controllable switching performance can be achieved.The FQU10N20TU_AM002 is a highly versatile transistor, capable of being used in a variety of applications including motor drives, relays, power inverters, high power RF amplifiers, and microwave or satellite communications. When used in these applications, the FQU10N20TU_AM002 works to control switch times, vary current or voltage levels, or limit the amount of current passing through an electronic system. This can be used to improve overall efficiency of the device and system, or to reduce the power consumption of the device for long-term operation.The FQU10N20TU_AM002 is also used in a variety of analog applications, where its high-speed capabilities allow accurate control over signal flow, allowing more precise analog applications to be achieved. This is ideal for many medical and laboratory equipment, as well as in audio and video circuits to control levels.Finally, due to its excellent switching performance and affordability, the FQU10N20TU_AM002 has become increasingly popular in consumer electronic applications. As it is able to operate quickly, capable of switching as frequently and accurately as desired, equipment such as TV sets and CD players have become more reliable and efficient thanks to its inclusion.In conclusion, the FQU10N20TU_AM002 is a single-sided field-effect transistor with simple structure, low cost and excellent switching performance. This makes it a highly versatile device, capable of being used in applications ranging from RF amplifiers and motor drives to consumer electronics. Its working principle is based on modulating current flow through a gate-drain connection, allowing a much more controllable switching performance compared to other transistors. As such, the FQU10N20TU_AM002 has become a popular choice for applications to improve overall system efficiency and performance.

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