FQU13N10LTU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FQU13N10LTU is an N-Channel Field-Effect Transistor (FET) manufactured by Fairchild Semiconductor International. It is categorised as a single FET, which means it contains only one FET. FQU13N10LTU is a depletion-mode MOSFET, which means that the channel of the transistor acts as an insulator when there is no voltage applied to its gate. This specific FET has a breakdown voltage (BVdss) of 200 V and a continuous drain source voltage of 100 V.

FQU13N10LTU is primarily used for applications where high power or precision is needed. These applications include power circuits, motor control, digital signal processing, audio amplifiers, switching circuits, and protection circuits. The device is also suitable for high-speed switching due to its relatively low RDS(on) of 3.1 Ω at VGS = 10 V, and fast enable and disable times.

The principle of operation of FQU13N10LTU is relatively straightforward. The transistor contains a channel of n-type semiconductor material as well as two other terminals, a gate and a drain. When a positive voltage is applied to the gate, it generates an electric field that attracts electrons from the channel, thus forming a ‘depletion layer’. This depletion layer acts as an insulator, preventing current from flowing through the channel and effectively turning off the transistor. When the voltage is removed, the electrons are immediately able to flow freely through the channel, thus turning on the transistor.

In summary, FQU13N10LTU is a single, depletion-mode MOSFET. It is primarily used for applications where high power or precision is required and can handle a breakdown voltage of 200 V and a continuous drain source voltage of 100 V. The device is operated by creating a depletion layer between the gate and the channel using an applied voltage, which forms an insulator and effectively turns off the transistor.

The specific data is subject to PDF, and the above content is for reference