FQU13N10TU

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	180 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQU13N10TU Application Field and Working Principle

FQU13N10TU is the most commonly used and the most popular transistor, mainly used in switching and amplifying circuits. It is a kind of Field Effect Transistor (FET), specifically a MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. It also belongs to a single FET family.FQU13N10TU is usually used in a wide range of applications such as air conditioners, automobiles, industrial automation, and PCs. In addition, this transistor is also used in circuits that require robustness, such as in switch mode power supplies and motor drives.This transistor is a four-terminal device composed of three regions and two gates. The source and drain regions are formed from a P-type substrates, and the gate region is an N-type material. When a voltage is applied across the source and the drain terminals, it acts as an amplifier as well as a switch.The working principle of FQU13N10TU is based on the quantum theory, in which electrons travel through a semiconductor material, such as a metal oxide. The electrons heat up the material, which allows them to travel through the material more easily. When a voltage is applied across the source and the drain terminals, this causes the electrons to travel through the material more quickly, and then the current flow increases. This is what amplifies the signal when it passes through the transistor.The FQU13N10TU also has the unique characteristic that it can handle high power, allowing it to be used in power amplifiers that drive large motors. This is due to the high voltage, high current ratings of the transistor, and its ability to withstand high temperatures.In conclusion, FQU13N10TU is a versatile device that is able to handle both switching and amplifying applications. It can be used in a wide range of applications, from air conditioners to industrial automation and PCs. It has high voltage, current ratings, and temperature resistance, making it the ideal device for power amplifiers and motor drives. Its working principle is based on the quantum theory, which helps it amplify signals and current flow.

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