IPA50R140CPXKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPA50R140CPXKSA1 is a single depletion-modeN-channel Power MOSFET based on HEXFET power MOSFET technology. With robust design features like rugged gate oxides, fast switching speeds, and temperature tolerant source, this fet is ideal for a wide range of power applications.

This MOSFET is available in a multi-source package. It features a single carrier level and a floating annular gate structure for improved cooling. The gate threshold voltage is adjustable for improved switching performance and high-side switching.

Applications of IPA50R140CPXKSA1 include high-frequency switching, high-current switching, and high-voltage switching in power control circuits. It can be used in circuitry operating from 5V to 100V and can handle currents up to 10A with a power rating of 50W.

The working principle of IPA50R140CPXKSA1 is based on the junction field effect of a MOSFET. When voltage is applied to the gate, channel electrons are attracted to the gate and cause a current to flow through the channel. This current is called the drain current. As voltage is increased, the channel conductivity increases and the drain current increases linearly. Therefore this type of transistors is also considered as linear transistors.

IPA50R140CPXKSA1 provides an excellent combination of low on-resistance and gate charge. It also has a low gate driver requirement which means it can be switched by 4 to 6V. This gate drive requirement makes the device suitable for use in low-voltage designs.

The IPA50R140CPXKSA1 has very low gate-to-source capacitance and gate-to-drain capacitance. This helps to reduce the switching losses. It also has a low gate-output capacitance which helps to reduce the effects of Miller-effect induced power losses. Therefore, it can achieve very high speed switching.

The IPA50R140CPXKSA1 has a wide range of temperature tolerance. It is rated for operation from -55°C to 150°C. This makes it suitable for operation in extreme environments.

The IPA50R140CPXKSA1 also features a high peak current capability and robust avalanche energy capability. This capability makes it suitable for use in power supplies, motor control, UPS systems, and similar applications.

IPA50R140CPXKSA1 is a single depletion-mode N-channel Power MOSFET based on HEXFET technology. It is a versatile device with a wide range of applications in power control circuits and high-frequency switching performances. Its low gate-drive requirements and wide temperature range make it suitable for operation in extreme environments. Its high peak current and avalanche energy capabilities make it suitable for use in many power applications.

The specific data is subject to PDF, and the above content is for reference